Publications by authors named "Y El Gmili"
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE).
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- NSAG technique produces high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire with uniform, single crystalline structures.
- These nanopyramids feature 22% indium incorporation and a thickness of 100 nm, making them comparable to structures on GaN and AlN/Si templates.
- The selective etching capability of ZnO allows for transferring these nanostructures to alternative, potentially cheaper substrates, providing a new avenue for developing flexible and tunable light-emitting diodes.
We report nano-selective area growth (NSAG) of BGaN by MOCVD on AlN/Si(111) and GaN templates resulting in 150 nm single crystalline nanopyramids. This is in contrast to unmasked or micro-selective area growth, which results in a multi-crystalline structure on both substrates. Various characterization techniques were used to evaluate NSAG as a viable technique to improve BGaN material quality on AlN/Si(111) using results of GaN NSAG and unmasked BGaN growth for comparison.
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