Anisotropic Resonant Tunneling in Twist-Stacked van der Waals Heterostructure.

Resonant tunneling, with energy and momentum conservation, has been extensively studied in two-dimensional van der Waals heterostructures and has potential applications in band structure probing, multivalued logic, and oscillators. Lattice alignment is crucial in resonant tunneling transistors (RTTs) for achieving negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) because twist-angle-induced momentum mismatch can break the resonant tunneling condition. Here, we report anisotropic resonant tunneling in twist-stacked ReSe/-BN/ReSe RTTs, where the PVR exhibits a strong dependence on the twist angle between the two ReSe layers, reaching a maximum at the twist angle of 102°.