Publications by authors named "Xueying Zhan"

Ferroelectric field-effect transistors (FeFETs) commonly utilize traditional oxide ferroelectric materials for their strong remanent polarization. Yet, integrating them with the standard complementary metal oxide semiconductor (CMOS) process is challenging due to the need for lattice matching and the high-temperature rapid thermal annealing process, which are not always compatible with CMOS fabrication. However, the advent of the ferroelectric semiconductor α-InSe offers a compelling solution to these challenges.

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Steering on the intrinsic active site of an electrode material is essential for efficient electrochemical biomass upgrading to valuable chemicals with high selectivity. Herein, we show that an in-situ surface reconstruction of a two-dimensional layered CdPS nanosheet electrocatalyst, triggered by electrolyte, facilitates efficient 5-hydroxymethylfurfural (HMF) hydrogenation to 2,5-bis(hydroxymethyl)furan (BHMF) under ambient condition. The in-situ Raman spectroscopy and comprehensive post-mortem catalyst characterizations evidence the construction of a surface-bounded CdS layer on CdPS to form CdPS/CdS heterostructure.

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Article Synopsis
  • Fungal plasma membrane proteins are crucial targets for antifungal treatments, but their structures and distributions are not well understood.
  • This study uses techniques like cryo-electron tomography and live cell imaging to investigate the organization of essential membrane proteins, GS and Pma1, finding they are unevenly spread in the plasma membrane.
  • The research reveals that the antifungal drug caspofungin alters the distribution of these proteins, suggesting a new model for how echinocandin drugs work by affecting the plasma membrane environment of fungal cells.
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Visible-blind ultraviolet (UV) light detection has a wide application range in scenes like space environment monitoring and medical imaging. To realize miniaturized UV detectors with high performance and high integration ability, new device structures without bulky light filters need to be developed based on advanced mechanisms. Here the unipolar barrier van der Waals heterostructure (UB-vdWH) photodetector is reported that realizes filter-free visible-blind UV detection with good stability, robustness, selectivity, and high detection performance.

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Dynamic vision perception and processing (DVPP) is in high demand by booming edge artificial intelligence. However, existing imaging systems suffer from low efficiency or low compatibility with advanced machine vision techniques. Here, we propose a reconfigurable bipolar image sensor (RBIS) for in-sensor DVPP based on a two-dimensional WSe/GeSe heterostructure device.

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Cryo-electron microscopy (cryo-EM) emerges as a pivotal technology for determining the architecture of cells, viruses, and protein assemblies at near-atomic resolution. Traditional particle picking, a key step in cryo-EM, struggles with manual effort and automated methods' sensitivity to low signal-to-noise ratio (SNR) and varied particle orientations. Furthermore, existing neural network (NN)-based approaches often require extensive labeled datasets, limiting their practicality.

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Tin telluride (SnTe), as a narrow bandgap semiconductor material, has great potential for developing photodetectors with wide spectra and ultra-fast response. At the same time, it is also an important topological crystal insulator material, with different topological surface states on several common surfaces. Here, we introduce different Sn sources and control the growth of regular SnTe nanosheets along the (100) and (111) planes through the atmospheric pressure chemical vapor deposition method.

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In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed.

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In-sensor computing hardware based on emerging reconfigurable photosensors can effectively reduce redundant data and decrease power consumption, which can greatly promote the evolution of machine vision. However, because of the complex device structures and low integration abilities, the common architectures mainly lie in two dimensions, resulting in low time and area efficiencies. Here we propose a three-dimensional (3D) neuromorphic photosensor array for parallel in-sensor image processing.

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Iron oxyhydroxide has been considered an auspicious electrocatalyst for the oxygen evolution reaction (OER) in alkaline water electrolysis due to its suitable electronic structure and abundant reserves. However, Fe-based materials seriously suffer from the tradeoff between activity and stability at a high current density above 100 mA cm . In this work, the Ce atom is introduced into the amorphous iron oxyhydroxide (i.

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The concurrent photocatalytic synthesis of hydrogen gas and high-valued chemicals over two-dimensional semiconductors is extremely attractive to alleviate global energy and environmental concerns through directly using sunlight. Herein, a novel layered InPSe nanosheet is synthesized by a space confined chemical vapor conversion method, and it acts as a dual-functional photocatalyst to deliver the co-production of hydrogen gas and -benzylidenebenzylamine from water reduction and selective benzylamine oxidation. The simultaneous yield of hydrogen gas and -benzylidenebenzylamine is 895 μmol g and 681 μmol g, respectively, within 16-hour continuous reaction involving a small amount of water in acetonitrile solvent.

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Photodetectors based on low-dimensional materials usually suffer from serious optical power-dependent photoresponse and low reliability, particularly in the ultraviolet regime. The barrier photodetector is an effective and reliable strategy where the barrier layer can block the low-energy charge carriers while allowing for a flow of the high-energy photocarriers. Here, vertical barrier heterostructure photodetectors (VBHPs), consisting of a graphene bottom electrode, a MoS light absorber, and an h-BN energy barrier, for reliable, robust, and high-performance ultraviolet detection are reported.

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Two-dimensional semiconductors have great potential for beyond-silicon electronics. However, because of the lack of controllable doping methods, Fermi level pinning, and van der Waals (vdW) gaps at the metal-semiconductor interfaces, these devices exhibit high electrical contact resistances, restricting their practical applications. Here, we report a general contact-resistance-lowering strategy by constructing vertical metal-semiconductor-metal memristor structures at the contact regions and setting them into a nonvolatile low-resistance state through a memristive forming process.

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As an important metal phosphides material, 2D tin phosphides (SnP 0 <  x ≤ 3) have been theoretically predicted to have intriguing physicochemical properties and potential applications in electronics, optoelectronics, and energy fields. However, the synthesis of high-quality 2D SnP single crystal has not been reported due to the lack of efficiency and reliable growth method. Here, a facile atmospheric pressure chemical vapor deposition (APCVD) method is developed to realize the growth of high-quality 2D SnP nanosheets, by employing tin (Sn) foil as both liquid metal substrates and reaction precursor.

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The electrochemical CO reduction into formate acid over Pd-based catalysts under a wide potential window is a challenging task; CO poisoning commonly occurring on the vulnerable surface of Pd must be overcome. Herein, we designed a two-dimensional (2D) AuNP-in-PdNS electrocatalyst, in which the Au nanoparticles are intercalated in Pd nanosheets, for formate production under a wide potential window from -0.1 to -0.

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Exploring materials with multiple properties who can endow a simple device with integrated functionalities has attracted enormous attention in the microelectronic field. One reason is the imperious demand for processors with continuously higher performance and totally new architecture. Combining ferroelectric with semiconducting properties is a promising solution.

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Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrIand GrGeTenanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit.

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Two-dimensional (2D) non-van der Waals magnetic materials have attracted considerable attention due to their high-temperature ferromagnetism, active surface/interface properties originating from dangling bonds, and good stability under ambient conditions. Here, we demonstrate the controlled synthesis and systematic Raman investigation of ultrathin non-van der Waals antiferromagnetic α-MnSe single crystals. Square and triangular nanosheets with different growth orientations can be achieved by introducing different precursors via the atmospheric chemical vapor deposition (APCVD) method.

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As a promising candidate in various fields, including energy conversion and electronics, layered van der Waals metal phosphorus trichalcogenides (MPX) have been widely explored. In addition to the layered structures, MPX comprising post-transition metals (i.e.

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Overcoming the sub-5 nm gate length limit and decreasing the power dissipation are two main objects in the electronics research field. Besides advanced engineering techniques, considering new material systems may be helpful. Here, we demonstrate two-dimensional (2D) subthermionic field-effect transistors (FETs) with sub-5 nm gate lengths based on ferroelectric (FE) van der Waals heterostructures (vdWHs).

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Two-dimensional materials have been widely used in electronics due to their electrical properties that are not accessible in traditional materials. Here, we present the first demonstration of logic functions of unipolar memristors made of functionalized HfSeO flakes and memtransistors made of MoS/graphene/HfSeO van der Waals heterostructures. The two-terminal memristors exhibit stable unipolar switching behavior with high switching ratio (>10), high operating temperature (106 °C), long-term endurance (>10 s), and multibit data storage and can operate as memory latches and logic gates.

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Article Synopsis
  • 2D layered materials, especially transition metal dichalcogenides (TMDs), are gaining attention for their unique properties and potential in electronics and catalysis.
  • The chemical vapor deposition (CVD) technique is highlighted as an effective method for growing 2D TMDs and their heterostructures, allowing for better control over their synthesis.
  • Recent advancements include improved growth strategies and applications in electronics and catalysis, while ongoing challenges and future directions in TMD research are also discussed.
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The design of highly efficient electrocatalysts containing non-precious metals is crucial for promoting overall water splitting in alkaline media. In particular, Janus catalysts simultaneously facilitating the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are desirable. Herein, we fabricated a unique hierarchical heterostructure via growing Ni4W6O21(OH)2·4H2O (denoted as Ni-W-O) nanosheets on NiMoO4 rods, which was indispensable for regulating the morphology of the Ni-W-O structure.

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Barriers that charge carriers experience while injecting into channels play a crucial role on determining the device properties of van der Waals semiconductors (vdWS). Among various strategies to control these barriers, inserting a graphene layer underneath bulk metal may be a promising choice, which is still lacking experimental verification. Here, it is demonstrated that graphene/metal hybrid structures can form quasi-van der Waals contacts (q-vdWC) to ambipolar vdWS, combining the advantages of individual metal and graphene contacts together.

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