Excitation-wavelength-dependent photoluminescence in GaAs nanowires under high-pressure.

GaAs nanowires (NWs) have wide application potential as near-infrared optical devices and the high-pressure strategy has been applied to modulate their crystal and electronic structures. As another typical thermodynamic parameter, temperature can also affect the optical performance of semiconductors. Here we report the excitation-wavelength-dependent photoluminescence (EWDP) in GaAs NWs under high-pressure conditions.

Enhancing the light emission of GaAs nanowires by pressure-modulated charge transfer.

Strong non-radiative surface recombination in GaAs nanowires heavily blocks their applications as nanoscale optoelectronic devices. Pressure can effectively affect the surface recombination behaviors through tuning interactions between the surface of nanomaterials and the medium environment. Here, we report the pressure-induced light emission enhancement in GaAs nanowires high pressure photoluminescence measurements with nitrogen as the pressure transmitting medium.