Synthesis and Properties of Size-Adjustable CsPbBr Nanosheets for Potential Photocatalysis.

Amidst the rapid advancements in the fields of photovoltaics and optoelectronic devices, CsPbBr nanosheets (NSs) have emerged as a focal point of research due to their exceptional optical and electronic properties. This work explores the application potential of CsPbBr NSs in photonic and catalytic domains. Utilizing an optimized hot-injection method and a ZnBr-assisted in situ passivation strategy, we successfully synthesized CsPbBr NSs with controlled dimensions and optical characteristics.

Impact of Carrier Gas Flow Rate on the Synthesis of Monolayer WSe via Hydrogen-Assisted Chemical Vapor Deposition.

Transition metal dichalcogenides (TMDs), particularly monolayer TMDs with direct bandgap properties, are key to advancing optoelectronic device technology. WSe stands out due to its adjustable carrier transport, making it a prime candidate for optoelectronic applications. This study explores monolayer WSe synthesis via H-assisted CVD, focusing on how carrier gas flow rate affects WSe quality.

Synthesis of Size-Adjustable CsPbBr Perovskite Quantum Dots for Potential Photoelectric Catalysis Applications.

As a direct band gap semiconductor, perovskite has the advantages of high carrier mobility, long charge diffusion distance, high defect tolerance and low-cost solution preparation technology. Compared with traditional metal halide perovskites, which regulate energy band and luminescence by changing halogen, perovskite quantum dots (QDs) have a surface effect and quantum confinement effect. Based on the LaMer nucleation growth theory, we have synthesized CsPbBr QDs with high dimensional homogeneity by creating an environment rich in Br ions based on the general thermal injection method.

Precise Construction and Growth of Submillimeter Two-Dimensional WSe and MoSe Monolayers.

Currently, as shown by large-scale research on two-dimensional materials in the field of nanoelectronics and catalysis, the construction of large-area two-dimensional materials is crucial for the development of devices and their application in photovoltaics, sensing, optoelectronics, and energy generation/storage. Here, using atmospheric-pressure chemical vapor deposition, we developed a method to regulate growth conditions according to the growth mechanism for WSe and MoSe materials. By accurately controlling the hydrogen flux within the range of 1 sccm and the distance between the precursor and the substrate, we obtained large-size films of single atomic layers with thicknesses of only about 1 nm.