High-purity dichlorosilane (DCS) is an important raw material for thin film deposition in the semiconductor industry, such as epitaxial silicon, which is mainly produced by trichlorosilane (TCS) catalytic decomposition in a fixed-bed reactor. The productivity of DCS is strongly dependent on the controlling of the TCS decomposition reaction process, associated with the cost in practical application. In this study, we have performed computational fluid dynamics (CFD) simulation on the TCS decomposition reaction kinetics in a cylindrical fixed-bed reactor, in which the effects of catalyst bed height, feed temperature, and feed flow rate are stressed to predict the conversion rate of TCS and the generation rate of DCS.
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