Polarization enhanced GaN separate absorption and multiplication ultraviolet avalanche photodiodeswith an ScGaN interlayer.

This article proposes a separate absorption and multiplication (SAM) GaN-based avalanche photodiode (APD) that achieves both high gain and low operating voltage by applying Sc-based ferroelectric material ScGaN in APDs. The avalanche gain of the proposed SAM APD with a low Sc composition p-ScGaN insertion layer reaches 7.2 × 10, which is 60% higher than that of a conventional p-i-p-i-n GaN-based APD.

Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses.

An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using polymethylmethacrylate (PMMA). The morphological and optical properties of the as-prepared graphene and GaN were presented.

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures.

The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VSvdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VSvdW heterostructure and 100% spin polarization efficiency.

Recent advances in microbial fuel cell-based self-powered biosensors: a comprehensive exploration of sensing strategies in both anode and cathode modes.

With the rapid development of society, it is of paramount importance to expeditiously assess environmental pollution and provide early warning of toxicity risks. Microbial fuel cell-based self-powered biosensors (MFC-SPBs) have emerged as a pivotal technology, obviating the necessity for external power sources and aligning with the prevailing trends toward miniaturization and simplification in biosensor development. In this case, vigorous advancements in MFC-SPBs have been acquired in past years, irrespective of whether the target identification event transpires at the anode or cathode.

GaN/GaO avalanche photodiodes with separate absorption and multiplication structure.

This article proposes a new, to the best of our knowledge, separate absorption and multiplication (SAM) APD based on GaN/β-GaO heterojunction with high gains. The proposed APD achieved a high gain of 1.93 × 10.

High-responsivity dual-band ultraviolet photodetector based on GaO/GaN heterostructure.

Ultraviolet photodetectors have aroused wide concern based on wide-band-gap semiconductors, such as GaN and GaO. Exploiting multi-spectral detection provides unparalleled driving force and direction for high-precision ultraviolet detection. Here we demonstrate an optimized design strategy of GaO/GaN heterostructure bi-color ultraviolet photodetector, which presents extremely high responsivity and UV-to-visible rejection ratio.

Evaluation on Temperature-Dependent Transient Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.

In this work, temperature-dependent transient threshold voltage () instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage sweeping method. For SG devices, a concave-shaped evolution gradually occurs with the increase in temperature, and the concave peak appears faster with increasing reverse bias stress, followed by a corresponding convex-shaped recovery process. In contrast, the concave-shaped evolution for OG devices that occurred at room temperature gradually disappears in the opposite shifting direction with the increasing temperature, but the corresponding convex-shaped recovery process is not observed, substituted, instead, with a quick and monotonic recovery process to the initial state.

Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

We systematically study the device characteristics of the monolayer (ML) blue phosphorene metal-oxide semiconductor field-effect transistors (MOSFETs) by using ab initio quantum-transport simulations. The ML blue phosphorene MOSFETs show superior performances with ultrashort-channel length. We first predict the ultrascaled ML blue phosphorene MOSFETs with proper doping concentration and underlap structures are compliant with the high-performance (HP) and low-power (LP) requirements of the International Technology Roadmap for Semiconductors in the next decade in the aspects of the on-state current, delay time, and power dissipation.

Chemical Vapor Deposition Growth of Vertical MoS Nanosheets on p-GaN Nanorods for Photodetector Application.

Vertically oriented multilayered MoS nanosheets were successfully grown on p-GaN nanorod substrate using chemical vapor deposition (CVD) method. The p-GaN nanorod substrate was fabricated by dry etching employing self-assembled nickel (Ni) nanopartical as mask. Photoluminescence (PL) and Raman characterizations demonstrate the multilayered structure of MoS nanosheet growth on p-GaN nanorods as compared with the referential monolayer MoS2 on GaN wafer substrate under the same growth procedure.

An ultra-sensitive and selective nitrogen dioxide sensor based on a novel PC monolayer from a theoretical perspective.

The sensing properties of an α phase black phosphorus carbide (P2C2) monolayer for the adsorption of CO2, H2, H2O, N2, H2S, NH3, O2 and NO2 gases are theoretically investigated using first-principles calculations. We calculate the adsorption energy, equilibrium distance, Mulliken charge transfer, electron localization function, and work function to explore whether P2C2 is suitable for detecting NO2 gas. The results demonstrate that the P2C2 monolayer is highly sensitive and selective to NO2 gas molecules with robust adsorption energy and superior charge transfer due to the existence of strong orbital hybridization between the NO2 molecule and monolayer P2C2.

High Sensitivity and Selectivity of AsP Sensor in Detecting SF Decomposition Gases.

The sensing properties of monolayer arsenic phosphorus (AsP) for the adsorption of SF, HO, O, and SF decomposition gases (SO and HS) are theoretically investigated by the first-principle calculations. We calculate the adsorption energy, equilibrium distance, Mulliken charge transfer, and electron localization function (ELF) to explore whether AsP is suitable for detecting SF decomposition gases. By comparing the adsorption performance of SF, HO, O, and HS gases, we have revealed that the SO gas molecules could form stable chemisorption with AsP monolayer.

Regulation and function of runt-related transcription factors (RUNX1 and RUNX2) in goat granulosa cells.

Transcription factors, runt-related transcription factor 1 (RUNX1) and 2 (RUNX2), belong to the runt-related (RUNX) gene family and play critical roles in mammalian reproduction processes. However, the regulatory mechanisms of RUNX1 and RUNX2 expression or their functions in goat follicles remain largely unknown. Herein, RUNX1 and RUNX2 proteins were detected in the oocytes and granulosa cells of preantral and antral follicles, as well as corpus luteum by immunohistochemistry.

Photoluminescence Study of the Photoinduced Phase Separation in Mixed-Halide Hybrid Perovskite CHNHPb(BrI) Crystals Synthesized via a Solvothermal Method.

We systematically synthesized mixed-halide hybrid perovskite CHNHPb(BrI) (0 ≤ x ≤ 1) crystals in the full composition range by a solvothermal method. The as-synthesized crystals retained cuboid shapes, and the crystalline structure transitioned from the tetragonal phase to the cubic phase with an increasing Br-ion content. The photoluminescence (PL) of CHNHPb(BrI) crystals exhibited a continuous variation from red (768 nm) to green (549 nm) with increasing the volume ratio of HBr (V%), corresponding to a variation in the bandgap from 1.

A study on the electronic and interfacial structures of monolayer ReS-metal contacts.

In this paper, we perform a systematic and rigorous study to evaluate the Ohmic nature of the top-contact formed by the monolayer ReS (mReS) and metals (gold, silver, platinum, nickel, titanium, and scandium) by means of first-principles density functional theory calculations. We investigate the potential barrier, charge transfer and atomic orbital overlap at the mReS-metal interface in consideration of van der Waals forces to understand how efficiently carriers could be injected from the metal contact to the mReS channel. ReS is physisorbed on Au and Ag, which leads to little perturbation of its electronic structures and forms a larger Schottky contact and a higher tunnel barrier at the interface.