Monolayer (ML) Janus III-VI compounds have attracted the use of multiple competitive platforms for future-generation functional electronics, including non-volatile memories, field effect transistors, and sensors. In this work, the electronic and interfacial properties of ML GaSTe-metal (Au, Ag, Cu, and Al) contacts are systematically investigated using first-principles calculations combined with the non-equilibrium Green's function method. The ML GaSTe-Au/Ag/Al contacts exhibit weak electronic orbital hybridization at the interface, while the ML GaSTe-Cu contact exhibits strong electronic orbital hybridization.
View Article and Find Full Text PDFIn recent years, the two-dimensional (2D) semiconductor α-InSe has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-InSe/Au contacts with different polarization directions are studied, and a two-dimensional α-InSe asymmetric metal contact design is proposed. When α-InSe is polarized upward, it forms an n-type Schottky contact with Au.
View Article and Find Full Text PDFThe development of low-dimensional multifunctional devices has become increasingly important as the size of field-effect transistors decreases. In recent years, the two-dimensional (2D) semiconductor InSe has emerged as a promising candidate for applications in the fields of electronics and optoelectronics owing to its remarkable spontaneous polarization properties. Through first-principles calculations, the effects of the polarization direction and biaxial tensile strain on the electronic and contact properties of InSe/Au heterostructures are investigated.
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