Single-Layer ZnO Hollow Hemispheres Enable High-Performance Self-Powered Perovskite Photodetector for Optical Communication.

The carrier transport layer with reflection reduction morphology has attracted extensive attention for improving the utilization of light. Herein, we introduced single-layer hollow ZnO hemisphere arrays (ZHAs) behaving light trapping effect as the electron transport layer in perovskite photodetectors (PDs). The single-layer hollow ZHAs can not only reduce the reflection, but also widen the angle of the effective incident light and especially transfer the distribution of the optical field from the ZnO/FTO interface to the perovskite active layer confirmed by the 3D finite-difference time-domain simulation.

Welding Perovskite Nanowires for Stable, Sensitive, Flexible Photodetectors.

Compared with a single nanowire (NW) or NW array, the simpler preparation process of an NW network (NWN) enables it to be fabricated in large-scale, flexible, and wearable applications of photodetectors (PDs). However, the NWN behaves many microinterfaces (MIs) between NWs, seriously limiting the device performance and stability. Here, we demonstrate a welding strategy for an MAPbI NWN, which enhances the crystallinity of the NWN and enhances the radial transmission of photogenerated carriers, leading to a better device performance with ultrahigh stability.

All-Inorganic Halide Perovskite Alloy Nanowire Network Photodetectors with High Performance.

Organic-inorganic hybrid lead halide perovskites have attracted much attention in the photoelectric field due to their excellent characteristics, such as a tunable band gap, simple fabrication process, and high photoelectric conversion efficiency. However, the commercialization of the perovskite-based devices still faces many challenges, one of which is the inclusion of the toxic lead. Herein, we demonstrated a two-step solution method for synthesizing tin-based perovskite nanowires (NWs) with their application in photodetectors (PDs).