Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer.

Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties.

Ca-α-SiAlON:Eu Phosphors: Oxidation States, Energy Transfer, and Emission Enhancement by Incorporation-Aimed Surface Engineering.

Ca-α-SiAlON:Eu is one of the most promising phosphors exhibiting potential applications in high power LEDs owing to its excellent thermal stability and relatively high luminescence efficiency comparable to YAG:Ce commercial phosphors. The oxidation states of Eu ions in Ca-α-SiAlON:Eu are still questionable, and furthermore it exhibits lower luminescence intensity than commercial yellow phosphors. Therefore, in the present work, the valences of Eu ions in Ca-α-SiAlON have been examined, from which a mixture of divalence and trivalence is observed.

Dark Matter Results from First 98.7 Days of Data from the PandaX-II Experiment.

We report the weakly interacting massive particle (WIMP) dark matter search results using the first physics-run data of the PandaX-II 500 kg liquid xenon dual-phase time-projection chamber, operating at the China JinPing underground laboratory. No dark matter candidate is identified above background. In combination with the data set during the commissioning run, with a total exposure of 3.

Multiple doping structures of the rare-earth atoms in β-SiAlON:Ce phosphors and their effects on luminescence properties.

The critical doping structures of rare-earth atoms in the promising β-SiAlON phosphors have long been argued owing to the lack of direct evidence. Here, the exact locations and coordination of the Ce rare-earth atoms in the β-SiAlON structure have been examined using an atom-resolved Cs-corrected scanning transmission electron microscope. Three different occupation sites for the Ce atoms have been directly observed: two of them are in the structural channel coordinated with six and nine N(O) atoms, respectively; the other one is the unexpected substitution site for Si(Al).

Effects of gamma-irradiation and air annealing on Yb-doped Y3Al5O12 single crystal.

The effects of gamma-irradiation on the air-annealed 10at.% Yb:Y(3)Al(5)O(12) (YAG) and air annealing on the gamma-irradiated 10at.% Yb:YAG have been studied by the difference absorption spectra before and after treatment.

Effects of Yb concentration on the fluorescence spectra of Yb-doped YAlO3 single crystals.

0.5 at.% Yb:YAlO(3)(YAP), 5 at.

Effects of Yb concentration on the spectroscopic properties of Yb: Y3Al5O12.

Yb:YAG single crystals with Yb doping concentration 5.4, 16.3, 27.