Spin-Enhanced Self-Powered Light Helicity Detecting Based on Vertical WSe-CrI Heterojunction.

Two-dimensional (2D) magnetic semiconductors offer an intriguing platform for investigating magneto-optoelectronic properties and hold immense potential in developing prospective devices when they are combined with valley electronic materials like 2D transition-metal dichalcogenides. Herein, we report various magneto-optoelectronic response features of the vertical hBN-FLG-CrI-WSe-FLG-hBN van der Waals heterostructure. Through a sensible layout and exquisite manipulation, an hBN-FLG-CrI-FLG-hBN heterostructure was also fabricated on identical CrI and FLGs for better comparison.

P/N-Type Conversion of 2D MoTe Controlled by Top Gate Engineering for Logic Circuits.

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration.

Nanoscale Channel Length MoS Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes.

Two-dimensional transition metal dichalcogenides (TMDCs) have natural advantages in overcoming the short-channel effect in field-effect transistors (FETs) and in fabricating three-dimensional FETs, which benefit in increasing device density. However, so far, most reported works related to MoS FETs with a sub-100 nm channel employ mechanically exfoliated materials and all of the works involve electron beam lithography (EBL), which may limit their application in fabricating wafer-scale device arrays as demanded in integrated circuits (ICs). In this work, MoS FET arrays with a side-wall source and drain electrodes vertically distributed are designed and fabricated.

Large-Scale Vertically Interconnected Complementary Field-Effect Transistors Based on Thermal Evaporation.

With the rapid development of integrated circuits, there is an increasing need to boost transistor density. In addition to shrinking the device size to the atomic scale, vertically stacked interlayer interconnection technology is also an effective solution. However, realizing large-scale vertically interconnected complementary field-effect transistors (CFETs) has never been easy.

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown n-MoS and p-MoTe.

In this work, monolithic three-dimensional complementary metal oxide semiconductor (CMOS) inverter array has been fabricated, based on large-scale n-MoS and p-MoTe grown by the chemical vapor deposition method. In the CMOS device, the n- and p-channel field-effect transistors (FETs) stack vertically and share the same gate electrode. High k HfO is used as the gate dielectric.

Low-power-consumption CMOS inverter array based on CVD-grown -MoTe and -MoS.

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory.

Atomic-Precision Repair of a Few-Layer 2H-MoTe Thin Film by Phase Transition and Recrystallization Induced by a Heterophase Interface.

2D semiconductors have emerged as promising candidates for post-silicon nanoelectronics, owing to their unique properties and atomic thickness. However, in the handling of 2D material, various forms of macroscopic damage, such as cracks, wrinkles, and scratches, etc., are usually introduced, which cause adverse effects on the material properties and device performance.

Consequence of Optimal Bonding on Disordered Structure and Improved Luminescence Properties in T-Phase (Ba,Ca)SiO:Eu Phosphor.

T-phase (Ba,Ca)SiO:Eu, showing excellent luminescent thermal stability, has a positionally disordered structure with the splitting of five atom sites, but until now the reason has remained unclear. Herein, we investigate the coordination environments of each cation site in detail to understand the origins of the atom site splitting. We find that the three cation sites in the split-atom-site model are optimally bonded with ligand O atoms compared to the unsplit-atom-site model.

Control of Luminescence in Eu-Doped Orthosilicate-Orthophosphate Phosphors by Chainlike Polyhedra and Electronic Structures.

A series of Eu-doped orthosilicate-orthophosphate solid-solution phosphors, KBa(SiP)O:0.03Eu, have been synthesized via the conventional solid-state reaction. Using varying compositions, the lowest-energy excitation can be tuned from 470 to 405 nm, with an emission from 515 to 423 nm.