The regulation of interfaces remains a critical and challenging aspect in the pursuit of highly efficient and stable perovskite solar cells (PSCs). Here, 2,2'-bipyridyl-4,4'-dicarboxylic acid (HBPDC) is incorporated as an interfacial layer between SnO and perovskite layers in PSCs. The two carboxylic acid moieties on HBPDC bind to SnO through esterification, while its nitrogen atoms, possessing lone electron pairs, interact with uncoordinated lead (Pb) atoms through Lewis acid-base interactions.
View Article and Find Full Text PDFIn situ cyclized polyacrylonitrile (CPAN) is developed to replace n-type metal oxide semiconductors (TiO or SnO) as an electron selective layer (ESL) for highly efficient and stable n-i-p perovskite solar cells (PSCs). The CPAN layer is fabricated via facile in situ cyclization reaction of polyacrylonitrile (PAN) coated on a conducting glass substrate. The CPAN layer is robust and insoluble in common solvents, and possesses n-type semiconductor properties with a high electron mobility of 4.
View Article and Find Full Text PDFAll-inorganic cesium lead triiodide (CsPbI) perovskite has received increasing attention due to its intrinsic thermal stability and suitable band gap for photovoltaic applications. However, it is difficult to deposit high-quality pure-phase CsPbI films using CsI and PbI as precursors due to the rapid nucleation and crystal growth by the solution coating method. Here, a simple cation-exchange approach is employed to fabricate all-inorganic 3D CsPbI perovskite, where 1D ethylammonium lead (EAPbI) perovskite is first solution-deposited and then transformed to 3D CsPbI via ion exchange between EA and Cs during thermal annealing.
View Article and Find Full Text PDFInorganic cesium lead iodide perovskite CsPbI is attracting great attention as a light absorber for single or multi-junction photovoltaics due to its outstanding thermal stability and proper band gap. However, the device performance of CsPbI -based perovskite solar cells (PSCs) is limited by the unsatisfactory crystal quality and thus severe non-radiative recombination. Here, vacuum-assisted thermal annealing (VATA) is demonstrated as an effective approach for controlling the morphology and crystallinity of the CsPbI perovskite films formed from the precursors of PbI , CsI, and dimethylammonium iodide (DMAI).
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