Tunable strain gauges based on two-dimensional silver nanowire networks.

Strain gauges are used in various applications such as wearable strain gauges and strain gauges in airplanes or structural health monitoring. Sensitivity of the strain gauge required varies, depending on the application of the strain gauge. This paper reports a tunable strain gauge based on a two-dimensional percolative network of silver nanowires.

Films of Carbon Nanomaterials for Transparent Conductors.

The demand for transparent conductors is expected to grow rapidly as electronic devices, such as touch screens, displays, solid state lighting and photovoltaics become ubiquitous in our lives. Doped metal oxides, especially indium tin oxide, are the commonly used materials for transparent conductors. As there are some drawbacks to this class of materials, exploration of alternative materials has been conducted.

Effect of doping on single-walled carbon nanotubes network of different metallicity.

Effects of doping on single-walled carbon nanotubes (SWNT) networks with different metallicity are reported through the study of sheet resistance changes upon annealing and acid treatment. SWNT film with high metallic tube content is found to have relatively good chemical stability against post treatments, as demonstrated from its stable film performance in ambient after annealing, and merely 15% reduction in sheet resistance upon sulfuric acid treatment. Conversely, film stability of SWNT film with low metallic content which comprises largely of semiconducting SWNT varies with days in ambient, and its sheet resistance changes drastically after treated with acid, indicating the extreme sensitivity of semiconducting SWNT to surrounding environment.

Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts.

High quantum efficiencies and low current thresholds are important properties for all classes of semiconductor light emitting devices (LEDs), including nanoscale emitters based on single wall carbon nanotubes (SWNTs). Among the various configurations that can be considered in SWNT LEDs, two terminal geometries with asymmetric metal contacts offer the simplest solution. In this paper, we study, experimentally and theoretically, the mechanisms of electroluminescence in devices that adopt this design and incorporate perfectly aligned, horizontal arrays of individual SWNTs.

Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes.

Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmic contacts that exhibit negligible dependence of their resistances on gate voltage.

Electroluminescence from electrolyte-gated carbon nanotube field-effect transistors.

We demonstrate near-infrared electroluminescence from ambipolar, electrolyte-gated arrays of highly aligned single-walled carbon nanotubes (SWNT). Using electrolytes instead of traditional oxide dielectrics in carbon nanotube field-effect transistors (FET) facilitates injection and accumulation of high densities of holes and electrons at very low gate voltages with minimal current hysteresis. We observe numerous emission spots, each corresponding to individual nanotubes in the array.

High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes.

The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation.

DNA sensing by field-effect transistors based on networks of carbon nanotubes.

We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal-SWCNT junctions rather than the channel conductance.