Ultralow-Noise MoS/Type II Superlattice Mixed-Dimensional van der Waals Barrier Long-Wave Infrared Detector.

Low-noise, high-performance long-wave infrared detectors play a crucial role in diverse applications, including in the industrial, security, and medical fields. However, the current performance of long-wave detectors is constrained by the noise associated with narrow bandgaps. Therefore, exploring novel heterostructures for long-wavelength infrared detection is advantageous for the development of compact and high-performance infrared sensing.

Uncooled Broadband Photodetection Light Trapping in Conformal PtTe-Silicon Nanopillar Heterostructures.

Dirac semimetals have demonstrated significant attraction in the field of optoelectronics due to their unique bandgap structure and high carrier mobility. Combining them with classical semiconductor materials to form heterojunctions enables broadband optoelectronic conversion at room temperature. However, the low light absorption of layered Dirac semimetals substantially limits the device's responsivity in the infrared band.

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit.

Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap. This breakthrough has played a significant role in accelerating the development of infrared imaging in one chip with state-of-the-art silicon techniques. However, the performance of these Schottky infrared detectors is currently hindered by the limit of internal photoemission; specifically, a low Schottky barrier height is inevitable for the detection of low-energy infrared photons.

Bionic visual-audio photodetectors with in-sensor perception and preprocessing.

Serving as the "eyes" and "ears" of the Internet of Things, optical and acoustic sensors are the fundamental components in hardware systems. Nowadays, mainstream hardware systems, often comprising numerous discrete sensors, conversion modules, and processing units, tend to result in complex architectures that are less efficient compared to human sensory pathways. Here, a visual-audio photodetector inspired by the human perception system is proposed to enable all-in-one visual and acoustic signal detection with computing capability.

Synergistic-potential engineering enables high-efficiency graphene photodetectors for near- to mid-infrared light.

High quantum efficiency and wide-band detection capability are the major thrusts of infrared sensing technology. However, bulk materials with high efficiency have consistently encountered challenges in integration and operational complexity. Meanwhile, two-dimensional (2D) semimetal materials with unique zero-bandgap structures are constrained by the bottleneck of intrinsic quantum efficiency.

The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials.

Polycrystalline optoelectronic materials are widely used for photoelectric signal conversion and energy harvesting and play an irreplaceable role in the semiconductor field. As an important factor in determining the optoelectronic properties of polycrystalline materials, grain boundaries (GBs) are the focus of research. Particular emphases are placed on the generation and height of GB barriers, how carriers move at GBs, whether GBs act as carrier transport channels or recombination sites, and how to change the device performance by altering the electrical behaviors of GBs.

Intermolecular 3D-MoRSE Descriptors for Fast and Accurate Prediction of Electronic Couplings in Organic Semiconductors.

The theoretical rational design of organic semiconductors faces an obstacle in that the performance of organic semiconductors depends very much on their stacking and local morphology (for example, phase domains), which involves numerous molecules. Simulation becomes computationally expensive as intermolecular electronic couplings have to be calculated from density functional theory. Therefore, developing fast and accurate methods for intermolecular electronic coupling estimation is essential.

Graphene nanowalls in photodetectors.

Graphene nanowalls (GNWs) have emerged as a promising material in the field of photodetection, thanks to their exceptional optical, electrical, mechanical, and thermodynamic properties. However, the lack of a comprehensive review in this domain hinders the understanding of GNWs' development and potential applications. This review aims to provide a systematic summary and analysis of the current research status and challenges in GNW-based photodetectors.

Polarity-Tunable Field Effect Phototransistors.

Field-effect phototransistors feature gate voltage modulation, allowing dynamic performance control and significant signal amplification. A field-effect phototransistor can be designed to be inherently either unipolar or ambipolar in its response. However, conventionally, once a field-effect phototransistor has been fabricated, its polarity cannot be changed.

Gradual funnel photon trapping enhanced InAs/GaSb type-II superlattice infrared detector.

InAs/GaSb type-II superlattice materials have attracted in the field of infrared detection due to their high quality, uniformity and stability. The performance of InAs/GaSb type-II superlattice detector is limited by dark noise and light response. This work reports a gradual funnel photon trapping (GFPT) structure enabling the light trapping in the T2SL detector absorption area.

Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon.

Highly sensitive short-wave infrared (SWIR) detectors, compatible with the silicon-based complementary metal oxide semiconductor (CMOS) process, are regarded as the key enabling components in the miniaturized system for weak signal detection. To date, the high photogain devices are greatly limited by a large bias voltage, low-temperature refrigeration, narrow response band, and complex fabrication processes. Here, we demonstrate high photogain detectors working in the SWIR region at room temperature, which use graphene for charge transport and Te-hyperdoped silicon (Te-Si) for infrared absorption.

Enhancing and Broadening the Photoresponse of Monolayer MoS Based on Au Nanoslit Array.

Two-dimensional molybdenum disulfide (MoS), featuring unique optoelectronic properties, has attracted tremendous interest in developing novel photodetection devices. However, the limited light absorption and small carrier transport rate of the monolayer MoS result in low photoresponse, and the large band gap limits its detection range in the visible region. In this study, we propose a nanoslit array-MoS hybrid device architecture with enhanced and broadened photoresponse.

Highly Crystalline Graphene as the Atomic 2D Blanket of a Perovskite Absorber for Enhanced Photovoltaic Performance.

Perovskite solar cells (PSCs) have demonstrated enormous potential for next-generation low-cost photovoltaics. However, due to the intrinsically low bond energy of the perovskite lattice, the long-term stability is normally undermined by ion migration initiated by the electric field and atmospheric conditions. Therefore, ideal ion migration inhibition is important to achieve an enhanced stability of PSCs.

Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates.

The use of single-crystal substrates as templates for the epitaxial growth of single-crystal overlayers has been a primary principle of materials epitaxy for more than 70 years. Here we report our finding that, though counterintuitive, single-crystal 2D materials can be epitaxially grown on twinned crystals. By establishing a geometric principle to describe 2D materials alignment on high-index surfaces, we show that 2D material islands grown on the two sides of a twin boundary can be well aligned.

Enhanced Photogating Effect in Graphene Photodetectors Potential Fluctuation Engineering.

The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line.

Dynamical manipulation of a dual-polarization plasmon-induced transparency employing an anisotropic graphene-black phosphorus heterostructure.

Dynamical tunable plasmon-induced transparency (PIT) possesses the unique characteristics of controlling light propagation states, which promises numerous potential applications in efficient optical signal processing chips and nonlinear optical devices. However, previously reported configurations are sensitive to polarization and can merely operate under specific single polarization. In this work we propose an anisotropic PIT metamaterial device based on a graphene-black phosphorus (G-BP) heterostructure to realize a dual-polarization tunable PIT effect.

Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer.

Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers.

Anomalous redshift of graphene absorption induced by plasmon-cavity competition.

Anomalous redshift of the absorption peak of graphene in the cavity system is numerically and experimentally demonstrated. It is observed that the absorption peak exhibits a redshift as the Fermi level of graphene increases, which is contrary to the ordinary trend of graphene plasmons. The influencing factors, including the electron mobility of graphene, the cavity length, and the ribbon width, are comprehensively analyzed.

Electrically tunable graphene metamaterial with strong broadband absorption.

The coupling system with dynamic manipulation characteristics is of great importance for the field of active plasmonics and tunable metamaterials. However, the traditional metal-based architectures suffer from a lack of electrical tunability. In this study, a metamaterial composed of perpendicular or parallel graphene-AlO-graphene stacks is proposed and demonstrated, which allows for the electric modulation of both graphene layers simultaneously.

Enhancement of the Photoresponse of Monolayer MoS Photodetectors Induced by a Nanoparticle Grating.

Photodetectors based on two-dimensional (2D) materials such as monolayer MoS are attractive because they can be directly integrated into the current metal-oxide semiconductor (CMOS) structures. Unfortunately, such devices suffer from low responsivity due to low absorption by the monolayer MoS. Combining MoS with plasmonic nanostructures is an alternative solution for enhancing the absorption of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector.

Light Trapping in Conformal Graphene/Silicon Nanoholes for High-Performance Photodetectors.

Hybrid graphene/silicon heterojunctions have been widely utilized in photodetectors because of their unique characteristics of high sensitivity, fast response, and CMOS compatibility. However, the photoresponse is restricted by the high reflectance of planar silicon (up to 50%). Herein, an improved graphene/Si detector with excellent light absorption performance is proposed and demonstrated by directly growing graphene on the surface of silicon nanoholes (SiNHs).

Impact of ZnO Photoluminescence on Organic Photovoltaic Performance.

ZnO is a widely used electron transport material in third generation solar cells. Intrinsic defects arising from different synthetic methods and conditions lead to different fluorescent colors. The defect mechanisms have been explored in the literature, but their impact on organic photovoltaic (OPV) cell performance is rarely reported.

Ultraflexible and High-Performance Multilayer Transparent Electrode Based on ZnO/Ag/CuSCN.

Driven by huge demand for flexible optoelectronic devices, high-performance flexible transparent electrodes are continuously sought. In this work, a flexible multilayer transparent electrode with the structure of ZnO/Ag/CuSCN (ZAC) is engineered, featuring inorganic solution-processed cuprous thiocyanate (CuSCN) as a hole-transport antireflection coating. The ZAC electrode exhibits an average transmittance of 94% (discounting the substrate) in the visible range, a sheet resistance ( R) of 9.

Mechanism of propagating graphene plasmons excitation for tunable infrared photonic devices.

The mechanism of propagating graphene plasmons excitation using a nano-grating and a Fabry-Pérot cavity as the optical coupling components is studied. It is demonstrated that the system could be well described within the temporal coupled mode theory using two phenomenological parameters, namely, the intrinsic loss rate and the coupling rate of a graphene plasmonic mode, and their analytical expressions are derived. It is found that the intrinsic loss rate is solely determined by the electron relaxation time of graphene, while independent of the field distributions of the modes.

Tunable spin Hall effect of light with graphene at a telecommunication wavelength.

The spin Hall effect of light (SHEL) has been widely studied for manipulating spin-polarized photons. In this Letter, we present a mechanism to tune the spin shift of the SHEL electrically at 1550 nm by means of introducing a graphene layer. The spin shift is quite sensitive to a graphene layer near the Brewster angle for horizontal polarization incidence and can be dynamically tuned by varying the Fermi energy of graphene.