High average power (105 W) Fe:ZnSe laser pumped by radiation of laser diode side-pumped Er:YAG lasers.

A high average power re-frequency operation Fe:ZnSe laser using laser diode side-pumped free-running Er:YAG lasers as activating sources is presented. Two pieces of subsurface layer doped Fe:ZnSe polycrystal are adoptive in a reflective resonator configuration and face-cooled by liquid nitrogen. A maximal Fe:ZnSe laser power of 105 W at a wavelength of 4.

Effect of non-metal doping on the optoelectronic properties of ZrS/ZrSe heterostructure under strain: a first-principles study.

Context: In this paper, we systematically studied the effects of non-metallic element (B, C, N, O, F) doping and biaxial stretching on the photoelectric properties of ZrS/ZrSe heterostructures by using the first-principles calculation method based on density functional theory. The results show that the p-type doping is realized by B, C, and N atom doping, and the n-type doping is realized by O and F atom doping. The doping of B and C atoms produces impurity energy levels in the band gap, which affects the conductivity of the heterostructure.

Strain-induced modification in thermal properties of monolayer 1 T-ZrS and ZrS/ZrSe heterojunction.

Context: This paper systematically analyzes the phonon dispersion curves of single-layer ZrS, ZrSe, and ZrS/ZrSe heterostructures under different strains. The phonon spectra and thermal parameters of the three structures were obtained based on the density functional perturbation theory method. The upper limits of strain that different monolayers and heterojunctions can withstand were studied.

Strain-induced effects on the optoelectronic properties of ZrSe/HfSe heterostructures.

Context: Two-dimensional semiconductor materials have received much attention in recent years due to their wide variety of applications in the field of nano-optoelectronic devices. In this project, we applied stresses ranging from -6 to +6% to the ZrSe/HfSe heterostructure and systematically investigated its electrical and optical properties. It is discovered that stress can effectively modulate the forbidden bandwidth of the ZrSe/HfSe heterojunction; whereas, under compressive stress, the forbidden bandwidth of the material decreases further until the bandgap is zero, leading to the material's transformation from semiconductor to metal.

Effect of doping and defects on the optoelectronic properties of ZrSe based on the first principle.

Context: Based on the first principles under the framework of density functional theory, it calculates the effect of vacancy defects in single Zr and single Se atoms and the replacement of Se atoms in ZrSe with O, Se, and Te atoms on the optoelectronic properties of monolayer ZrSe, including geometry, energy band structure, electronic density of states, and optical properties. The doping of the three non-metallic atoms was n-type doping for the O and S atoms and p-type doping for the Te atom. Defects in the Zr atoms and O-atom doping significantly affect the peak reflectance and absorption coefficient of the ZrSe system.

Performance of the mid-infrared Q-switched LD side-pumped Er:YSGG MOPA laser.

We report on a laser-diode (LD)-pumped master-oscillator power amplifier (MOPA) mid-infrared laser system based on an LD side-pumped Er:YSGG seed laser that can operate in both free-running and -switched regimes. In the free-running mode of the seed laser, the maximum amplified single-pulse energy was 83.4 mJ.

1.14 kW peak power mid-infrared Er:YAG planar waveguide MOPA laser.

We report on a quasi-continuous Er:YAG planar waveguide laser operated at 2.94 µm based on the major oscillator power amplification configuration. With the total pump peak power of 32.

Enhanced high-slope-efficiency and high-power LD side-pumped Er:YSGG laser.

We designed a high-slope-efficiency and high-power laser diode (LD) side-pump Er:YSGG laser based on the analysis for the effect of the crystal dimension and the LD distribution on the temperature and energy distributions in laser crystal. A maximum output power of 34.9 W for a 2.

208 W all-solid-state sodium guide star laser operated at modulated-longitudinal mode.

A 208 W all-solid-state modulated-longitudinal-mode quasi-continuous-wave sodium guide star (SGS) laser was developed by sum-frequency of a 1064 nm laser and a 1319 nm laser. The laser contained two spectral lines separated by 1.72 GHz for re-pumping the sodium atoms.

110 W 1678 nm laser based on high-efficiency optical parametric interactions pumped by high-power slab laser.

This Letter presents a high-efficiency optical parametric amplifier pumped by a high-power slab laser with approximate uniform rectangular distribution. By optimizing the overlapping, spectrum matching, and pulse synchronization for the pump and signal lasers, output power of 110.8 W at 1678 nm with corresponding conversion efficiency of 32.

High-power, narrow-bandwidth mid-infrared PPMgLN optical parametric oscillator with a volume Bragg grating.

We report on a high-power, narrow spectral bandwidth 2.907 µm PPMgLN optical parametric oscillator (OPO) pumped by a 1.064 µm pulsed Nd:YAG MOPA laser source.

High-power and widely tunable mid-infrared optical parametric amplification based on PPMgLN.

We report on a high-power and widely tunable optical parametric amplifier (OPA) based on PPMgLN and pumped by a pulsed 1.064 μm MOPA laser. The operating wavelength of the OPA system is continuously tunable from 2.

High-efficiency mid-infrared optical parametric oscillator based on PPMgO:CLN.

The experimental results of a high-efficiency mid-IR laser are presented on a quasi-phase-matched single-resonated optical parametric oscillator in PPMgO:CLN pumped by a 1064 nm laser of an elliptical beam. The pump source was an acousto-optical Q-switched cw-diode-side-pumped Nd:YAG laser. The beam polarization matched the e-ee interaction in PPMgO:CLN.