Performance comparison of flip-chip blue-light microLEDs with various passivation.

In this study, arrays of μLEDs in four different sizes (5 × 5 μm, 10 × 10 μm, 25 × 25 μm, 50 × 50 μm) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating AlO deposited by atomic layer deposition (ALD) beneath the SiO layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays.

Improved electrical properties of micro light-emitting diode displays by ion implantation technology.

Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls were significantly damaged which result in small-sized μLED presenting a strong size-dependent influence. Lower emission intensity was observed in the μLED chip, which can be attributed to the effect of sidewall defect during etch processing.

Morphological, Material, and Optical Properties of ZnO/ZnS/CNTs Nanocomposites on SiO Substrate.

Ultraviolet A light (UV-A, 320-400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be simultaneously monitored with tiny rapid response sensors for a high carrier transition speed.