Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer.

In this paper, we significantly improved the internal quantum efficiency and output power of AlGaN-based deep UV (DUV) LEDs by replacing the conventional p-AlGaN electron blocking layer (EBL) with the p-AlInGaN/AlInGaN graded superlattice (SL) EBL. Simulation results show that the introduction of the p-AlInGaN graded SL EBL improved the carrier distribution while having the lower electric field, thus increasing the radiative recombination rate in multiple quantum wells (MQWs). The highest IQE obtained by p-AlInGaN/AlInGaN graded SL EBL is 96.