Grain Boundary Motion in Two-Dimensional Hexagonal Boron Nitride.

An in-depth understanding and precise controlling of grain boundary (GB) motion at the atomic scale are crucial for grain growth and recrystallization in polycrystalline materials. So far, the reported studies mainly focus on the GB motion in the ideal bicrystal system, while the atomic mechanisms of GB motion in polycrystals remain poorly understood. Herein, taking two-dimensional (2D) hexagonal boron nitride (h-BN) as a model system, we experimentally investigated the atomic-scale mechanisms of the GB motion in 2D polycrystals.

Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method.

Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging.

Deriving 2D MX (M = Mo, W, X = S, Se) by periodic assembly of chalcogen vacancy lines in their MX counterparts.

Structural defects in crystals are generally believed to disrupt the symmetry of the pristine lattice, but sometimes, they can also serve as the constituent elements of new structures if they are arranged in a well-ordered pattern. Herein, choosing 2D transition metal dichalcogenides (TMDCs) as a model system, we successfully fabricated a novel group of 2D materials-MX (M = Mo, W, X = S, Se) via the periodic assembly of chalcogen vacancy lines in their corresponding MX monolayers (such as MoS). Our ab initio calculations further revealed that these monolayer MX materials electronically exhibit quasi-direct narrow band-gap semiconducting characteristics, e.

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Precise control and in-depth understanding of the interfaces are crucial for the functionality-oriented material design with desired properties. Herein, via modifying the long-standing bicrystal strategy, we proposed a novel nanowelding approach to build up interfaces between two-dimensional (2D) materials with atomic precision. This method enabled us, for the first time, to experimentally achieve the quasi-full-parameter-space grain boundaries (GBs) in 2D hexagonal boron nitride (h-BN).

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe-MoSe Heterojunction Grown by Molecular-Beam Epitaxy.

Monolayer (ML) transition-metal dichalcogenides (TMDs) continue to attract research attention, and the heterojunctions formed by vertically stacking or laterally stitching two different TMDs, e.g., MoSe and WSe, may have many interesting electronic and optical properties and thus are at the center stage of current research.

Lateral and Vertical MoSe-MoS Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Atomically thin transition-metal dichalcogenide (TMDC) heterostructures have attracted increasing attention because of their unprecedented potential in the fields of electronics and optoelectronics. However, selective growth of either lateral or vertical TMDC heterostructures remains challenging. Here, we report that lateral and vertical MoS/MoSe epitaxial heterostructures can be successfully fabricated via a one-step growth strategy, which includes triggering by the concentration of sulfur precursor vapor and a high-temperature annealing process.

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe.

Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in heterostructures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe homobilayers, which induce uncommon fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences.

Fabrication of MoSe nanoribbons via an unusual morphological phase transition.

Transition metal dichalcogenides (TMDs) are a family of van der Waals layered materials exhibiting unique electronic, optical, magnetic and transport properties. Their technological potentials hinge critically on the ability to achieve controlled fabrication of desirable nanostructures, such as nanoribbons and nanodots. To date, nanodots/nanoislands have been regularly observed, while controlled fabrication of TMD nanoribbons remains challenging.

Tailoring the thermal and electrical transport properties of graphene films by grain size engineering.

Understanding the influence of grain boundaries (GBs) on the electrical and thermal transport properties of graphene films is essentially important for electronic, optoelectronic and thermoelectric applications. Here we report a segregation-adsorption chemical vapour deposition method to grow well-stitched high-quality monolayer graphene films with a tunable uniform grain size from ∼200 nm to ∼1 μm, by using a Pt substrate with medium carbon solubility, which enables the determination of the scaling laws of thermal and electrical conductivities as a function of grain size. We found that the thermal conductivity of graphene films dramatically decreases with decreasing grain size by a small thermal boundary conductance of ∼3.

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS/WSe hetero-bilayers.

By using direct growth, we create a rotationally aligned MoS/WSe hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity. By combining scanning tunneling microscopy/spectroscopy, transmission electron microscopy, and first-principles calculations, we investigate interlayer coupling as a function of atomic registry.

Growth of Polar Hexagonal Boron Nitride Monolayer on Nonpolar Copper with Unique Orientation.

Suppressing the oppositely orientated hexagonal boron nitride (h-BN) domains during the growth is of great challenge due to its bipolar structure. It is found that h-BN domains grown on onefold symmetric Cu(102) or (103) share a unique orientation, with one zigzag edge of the h-BN triangles perpendicular to the symmetry axis of the substrate surface.

Ultrastiff and Strong Graphene Fibers via Full-Scale Synergetic Defect Engineering.

Kilometer-scale continuous graphene fibers (GFs) with outstanding mechanical properties and excellent electrical conductivity are produced by high-throughput wet-spinning of graphene oxide liquid crystals followed by graphitization through a full-scale synergetic defect-engineering strategy. GFs with superior performances promise wide applications in functional textiles, lightweight motors, microelectronic devices, and so on.

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

The growth of high-quality two-dimensional (2D) layered chalcogenide crystals is highly important for practical applications in future electronics, optoelectronics, and photonics. Current route for the synthesis of 2D chalcogenide crystals by vapor deposition method mainly involves an energy intensive high-temperature growth process on solid substrates, often suffering from inhomogeneous nucleation density and grain size distribution. Here, we first demonstrate a facile vapor-phase synthesis of large-area high-quality 2D layered chalcogenide crystals on liquid metal surface with relatively low surface energy at a growth temperature as low as ∼100 °C.

All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2 /Graphene Heterostructures.

A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2 /Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2 /Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.