Publications by authors named "Xibei Feng"
Article Synopsis
- Optoelectronic devices aim to mimic the human visual system, but they currently fail to retain optical image information after external stimuli are removed, hindering their ability to combine perception and memory.
- This study introduces a multi-level UV optoelectronic memory device made from gallium nitride (GaN), designed to sense and store ultraviolet images, which contain invisible information to the human eye.
- The device features embedded SiO side-gates that enhance the lifetime of photogenerated carriers, allowing for effective dual-mode storage, excellent retention over 7 days, and versatile control of storage states and erasure times.
The third-generation semiconductor gallium nitride (GaN) has drawn wide attention due to its high electron mobility property. However, the classical mobility calculation methods such as Hall effect and transfer length method have limitations in accurately extracting the mobility of GaN High Electron Mobility Transistor (HEMT) due to their inability to consider the resistance in non-gate region or their high fabrication costs. This work proposes an effective yet accurate computational-fitting method for extracting the mobility of GaN HEMT.
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