Publications by authors named "Xiaotian Ge"

In this study, an improved PVA/PLA fibrous hemostatic membrane was prepared by electrospinning technology combined with air plasma modification. The plasma treatment was used to modify PLA to enhance the interlayer bonding between the PVA and PLA fibrous membranes first, then modify the PVA to improve the hemostatic capacity. The surfaces of the PLA and PVA were oxidized after air plasma treatment, the fibrous diameter was reduced, and roughness was increased.

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Plasmonic metallic nanostructures could concentrate optical fields into nanoscale volumes and support efficient light scattering and absorption, which therefore stimulates the continuing development of advanced plasmonic-assisted semiconductor photodetectors. In this work, by fabricating Al nanoparticle (NP) arrays in AlGaN surface using the AAO template transferring method, significant broadband ultraviolet (UV) photoresponse enhancement was demonstrated on AlGaN/GaN heterojunction photodetectors. By deliberately designing the close-packed Al NP arrays, the broadband UV plasmonic resonance with large optical field absorption and strong interface field enhancement are enabled, hence, the highest responsivity exceeding 8.

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In this paper, the giant tunability of thermal behaviors, i.e., from thermal deterioration to substantial growth, is firmly demonstrated for the vibronic luminescence of Mn ions in fluoride phosphors.

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Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, have great potential for the development of ecofriendly and high-efficiency nanodevices, which shows valuable applications as photovoltaic cells, photodetectors, etc. However, the coexistence of photoelectric conversion and storage in a single device has not been achieved until now. Here, we demonstrate a simple strategy to construct a vdW p-n junction between a WSe_{2} layer and quasi-2D electron gas.

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This letter reports the influence of material quality and device processing on the performance of AlGaN-based Schottky barrier deep ultraviolet photodetectors grown on Si substrates. The thermal annealing can significantly improve Schottky barrier height and wet chemical etching can effectively remove etching damage. Meanwhile, the decrease of threading dislocation density and the pit size, especially the later, can substantially suppress reverse leakage.

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Article Synopsis
  • Researchers are studying InGaN laser diodes (LDs) made on silicon (Si) to make better technology for photonics, which is about light and its use.
  • They found that getting rid of tiny defects, like unwanted carbon and gaps in the material, is really important to make these lasers work better.
  • After fixing these problems, the new InGaN lasers on silicon showed excellent results, needing less power to operate and working efficiently.
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We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component.

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