An asymptomatic perforation of the gastrointestinal tract caused by ingestion of foreign body: A case report.

Ingestion of foreign bodies is very common in clinical practice. However, gastrointestinal perforation caused by a foreign body is rare, as most foreign bodies can pass the alimentary tract spontaneously or be removed endoscopically. Ingesting a foreign body causes gastrointestinal tract perforation in less than 1% of cases that require surgery.

A highly integrated nonvolatile bidirectional RFET with low leakage current.

A highly integrated nonvolatile bidirectional reconfigurable FET controlled by a single gate (SGCN-BRFET) is proposed. The nonvolatile function, the bidirectional function and the reconfigurable function can be achieved at the same time. Instead of the independently powered program gate (PG) of BRFET, the program operation of the proposed SGCN-BRFET can be independently completed by the control gate (CG) itself through storing positive or negative charges in a floating program gate (FPG) formed on both source/drain sides.

Complementary Doped Source-Based Reconfigurable Schottky Diode as an Equivalence Logic Gate.

A complementary doped source-based reconfigurable Schottky diode (CDS-RSD) is proposed for the first time. Unlike other types of reconfigurable devices that have source and drain (S/D) regions with the same material, this has a complementary doped source region as well as a metal silicide drain region. Compared to three-terminal reconfigurable transistors, which have both the program gate and control gate, the proposed CDS-RSD does not have a control gate but only a program gate for reconfiguration operation.

A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.

In this paper, a nanoscale dopingless bidirectional RFET (BRFET) is proposed. Unlike conventional BRFETs, the proposed BRFET uses two different metal materials to form two different types of Schottky barriers on the interface between the S/D and silicon. For one of the two metal forms, the Schottky barrier height between the conduction band of the semiconductor and one of the two metal materials is lower than half of the energy band gap.

A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.

A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed. Comparing to the conventional reconfigurable field effect transistor (RFET) which requires two independently powered gates, the proposed NBRFET requires only one control gate. Beside, S/D floating gates are introduced.

A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor.

In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET). It can achieve much more sensitive forward current driving ability than the previously proposed High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET). Silicon body of the proposed VPISDC-HSB-BTFET is etched into a U-shaped structure.

A dual doping nonvolatile reconfigurable FET.

In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). It introduces nonvolatile charge storage layers on both source and drain sides as a floating program gate (FPG) instead of a program gate (PG) that needs independent power supply. The stored charges in the FPG are programmed by the control gate (CG).

A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor.

In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires only one gate electrode with independent power supply. More importantly, take an N type HLHSB-BTFET as an example, different from the previously proposed HSB-BTFET, due to that the effective potential of the central metal is increased with the increasing of drain to source voltage (V), built-in barrier heights maintain at the same value when the V is increased.

Mesh plug erosion into the small intestine after inguinal hernia repair: A case report.

Background: Mesh plug (MP) erosion into the intra-abdominal organs is a rare but serious long-term complication after inguinal hernia repair (IHR), and may lead to aggravation of symptoms if not treated promptly. It is difficult to diagnose MP erosion as there are no obvious specific clinical manifestations, and surgery is often needed for confirmation. In recent years, with the increased understanding of postoperative complications, MP eroding into the intra-abdominal organs has been a cause for concern among surgeons.

Nivolumab-associated DRESS in a genetic susceptible individual.

The use of immune checkpoint inhibitors (ICIs) is rising exponentially in numerous cancers, but immune-related adverse events can occur. We report a rare case of high-grade drug reaction with eosinophilia and systemic symptoms (DRESS) syndrome developed stepwise in a patient with gastric cancer after nivolumab treatment. Subclinical myocarditis was sensitively detected by cardiovascular magnetic resonance 3 weeks after initiating nivolumab.

A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor.

A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated circuits compared to the conventional asymmetrical TFET. The effects of the structural parameters, e.g.

Effect of kallikrein on microcirculation of rats with pancreatic ischemia reperfusion injury (IRI).

The common pathway for pancreatitis onset is pancreatic ischemia reperfusion injury (IRI), which plays an especially significant role in the evolution process from acute edematous pancreatitis (AP) towards severe acute pancreatitis (SAP). This study explored the effect of Kallikrein (PK) on pancreatic ischemia reperfusion injury (IRI). Male Wistar rats were taken as study objects, and a SAP -IRI combined model was established through retrograde infusion of 5% sodium taurocholate in biliopancreatic duct combining 30 min splenic artery clipping; drug intervention was carried out by pumping PK into rat caudal vein.

Multiple well-differentiated retroperitoneal liposarcomas with different patterns of appearance on computed tomography: A case report.

Background: Primary retroperitoneal liposarcoma (PRPLS) is a rare soft tissue tumor with nonspecific clinical symptoms; it has different computed tomography (CT) image features according to pathological types. Some patients with a single tumor have been previously reported in the literature. We present an exceptional case of a PRPLS patient with multiple large tumors exhibiting different patterns of appearance on CT and confirmed as atypical lipomatous tumor/well-differentiated liposarcoma by postoperative pathology.

A Highly Sensitive FET-Type Humidity Sensor with Inkjet-Printed Pt-InO Nanoparticles at Room Temperature.

In this work, Pt-doped InO nanoparticles (Pt-InO) were inkjet printed on a FET-type sensor platform that has a floating gate horizontally aligned with a control gate for humidity detection at room temperature. The relative humidity (RH)-sensing behavior of the FET-type sensor was investigated in a range from 3.3 (dry air in the work) to about 18%.

Influence of MoS-metal interface on charge injection: a comparison between various metal contacts.

Achieving good contacts is vital for harnessing the fascinating properties of two-dimensional (2D) materials. However, unsatisfactory 2D material-metal interfaces remain a problem that hinders the successful application of 2D materials for fabricating nanodevices. In this study, Kelvin probe force microscopy (KPFM) and other high-resolution microscopy techniques are utilized to characterize the surface morphology and contact interface between MoS and common metals including Au, Ti, Pd, and Ni.

Transcatheter Arterial Chemoembolisation Combined with Radiofrequency Ablation on Hepatocellular Carcinoma and Levels of Relevant Markers.

Objective: To investigate the ablative effect and safety of trans-catheter arterial chemoembolisation (TACE) combined with radiofrequency ablation (RFA), and TACE alone for the treatment of hepatocellular carcinoma and compare the changes in the level of relevant serum inflammatory and tumor markers.

Study Design: Descriptive comparative study.

Place And Duration Of Study: Department of Hepatobiliary Surgery, Affiliated Hospital of Hebei University, from January 2016 to June 2018.

Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors.

We investigated the effect of simultaneous mechanical and electrical stress on the electrical characteristics of flexible indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs). The IGZO TFTs exhibited a threshold voltage shift () under an application of positive-bias-stress (PBS), with a turnaround behavior from the positive to the negative with an increase in the PBS application time, whether a mechanical stress is applied or not. However, the magnitudes of PBS-induced in both the positive and negative directions exhibited significantly larger values when a flexible IGZO TFT was under mechanical-bending stress than when it was at the flat state.

A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts.

A novel high-performance rectangular gate U channel FET (RGUC FET) for extreme integrated distance between source and drain contacts is proposed in this paper. The RGUC FET represents nearly ideal subthreshold characteristics till the distance between source/drain (S/D) contacts reduced to 2 nm. Different from the other recessed or U-shaped channel-based FETs, the gate contacts do not need to be formed in the recessed region but only in a layer of spacer for the insulation between the two vertical parts on both sides of the U channel.

p53-induced microRNA-1246 inhibits the cell growth of human hepatocellular carcinoma cells by targeting NFIB.

In recent years, miR-1246 has been identified as a transcriptional target of p53 in Down syndrome and may provide a new p53-miR-1246-DYRK1A-NFAT pathway in cancer. The present study aimed to explore the role of miR-1246 in the tumorigenesis of human hepatocellular carcinoma (HCC). We found that wild-type p53 regulated the expression of miR-1246 in HCC cell lines, and alteration of miR-1246 modulated cell proliferation, colony formation ability and apoptosis.