Enhanced superconductivity of BaKFeAs under surface potassium dosing.

Surface potassium dosing has been proven to be an effective method in tuning the electron doping and enhancing the superconducting transition temperatures in both iron chalcogenides and electron doped iron pnictides. However, it is not clear how surface potassium dosing affects the hole doping and superconductivity in hole doped Fe-based superconductors. Here we performed K-dosing on BaKFeAs, a prototypical hole-doped iron pnictide compound, and explored the electronic structure by in situ angle-resolved photoemission spectroscopy measurements.

Superconductivity across Lifshitz transition and anomalous insulating state in surface K-dosed (LiFeOH)FeSe.

In iron-based superconductors, understanding the relation between superconductivity and electronic structure upon doping is crucial for exploring the pairing mechanism. Recently, it was found that, in iron selenide (FeSe), enhanced superconductivity ( of more than 40 K) can be achieved via electron doping, with the Fermi surface only comprising M-centered electron pockets. By using surface K dosing, scanning tunneling microscopy/spectroscopy, and angle-resolved photoemission spectroscopy, we studied the electronic structure and superconductivity of (LiFeOH)FeSe in the deep electron-doped regime.

A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2.

Electron-electron and electron-phonon interactions are two major driving forces that stabilize various charge-ordered phases of matter. In layered compound 1T-TaS2, the intricate interplay between the two generates a Mott-insulating ground state with a peculiar charge-density-wave (CDW) order. The delicate balance also makes it possible to use external perturbations to create and manipulate novel phases in this material.

Gate-tunable phase transitions in thin flakes of 1T-TaS2.

The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2.