Correction: Improved isoprene detection performance of Si-doped WO films deposited by sputtering and post-annealing.

[This corrects the article DOI: 10.1039/D4RA00184B.].

Improved isoprene detection performance of Si-doped WO films deposited by sputtering and post-annealing.

Si-doped WO films were sputtered at room temperature and then annealed in air at 500 °C. The Si doping resulted in structural distortion from space group 2/ to . A high density of pores with a diameter of ∼20 nm was observed in the films, which is ideal for gas sensing applications because of the easy diffusion of gas.

An S-scheme heterojunction between Mn/Mg co-doped BiFeO and g-CN nanosheets for photodegradation of organic pollutants.

BiFeMnMgO (BFMM, = 0-8%) was mixed with exfoliated g-CN (GCN) to form a composite for establishing an S-scheme heterojunction for photodegradation. BFMM was synthesized by sol-gel method, and showed a decreased band gap from 2.24 eV to 1.

Cation Valences and Multiferroic Properties of EuTiO Co-Doped with Ba and Transition Metals of Co/Ni.

EuBaTiMO (M = Co or Ni) was sintered at 1400 °C under a reduction atmosphere. X-ray photoelectron spectroscopy revealed the mixed valences of Eu/Eu and Ti/Ti in EuTiO and EuBaTiO, as well as some oxygen vacancies required to keep the charge neutrality. The co-doping of Co/Ni in EuBaTiO resulted in the disappearance of oxygen vacancies, as a result of a reduction in Ti numbers and an increase in Eu numbers.