Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS Films Via Pressure-Induc ed Supercritical Phase Nucleation.

In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO(acac) particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO and these particles are used as growth sites. The size of single-crystal MoS on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO droplets.

Timing Performance Simulation for 3D 4H-SiC Detector.

To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector.

Stable and Self-Powered Solar-Blind Ultraviolet Photodetectors Based on a CsCuI/β-GaO Heterojunction Prepared by Dual-Source Vapor Codeposition.

Self-powered solar-blind ultraviolet (UV) photodetectors have drawn worldwide attention in recent years because of their important applications in military and civilian areas. In this study, a dual-source vapor codeposition technique was employed, for the first time, to prepare a nontoxic copper halide CsCuI, which was integrated with the β-GaO wafer to construct a type-II heterojunction for photodetection applications. By optimizing the annealing conditions, high-quality CsCuI films with dense morphology, high crystallinity, and a long carrier lifetime of 1.

An effective hydroxylation route for a highly sensitive glucose sensor using APTES/GOx functionalized AlGaN/GaN high electron mobility transistor.

A highly sensitive glucose sensor based on AlGaN/GaN high electron mobility transistor (HEMT) has been fabricated. The hydroxyl groups on the GaN surface were achieved by the decomposition of hydrogen peroxide solution (HO) under UV irradiation for the production of hydroxyl radicals. The self-assembled monolayers (SAMs) of 3-aminopropyltriethoxysilane (APTES) with terminal amino groups formed on the hydroxylation surface were used as substrates for glucose oxidase (GOx) immobilization.

Self-powered SBD solar-blind photodetector fabricated on the single crystal of β-GaO.

A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal β-GaO. Cu and Ti/Au were deposited on the top and bottom surface of GaO as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 × 10 at ±2 V.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate.

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate.

Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction.

Electrically pumped lasing action has been realized in ZnO from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterostructure, an ultralow threshold of 3.9 mA was obtained. The mechanism of the laser is associated with the in-plane random resonator cavities formed in the ZnO films and the elaborate hollow-shaped SiO2 cladding pattern, which prevent the lateral diffusion of injection current and ultimately lower the threshold current of the laser diode.