In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO Thin Films.

With the formation of mesa-like cells at their surfaces, LiNbO thin films are useful for integrating high-density domain wall memory. However, the material is too hard and inert to etch the cells with inclined side edges that help to diminish polarization retention. Moreover, etching could damage the ferroelectricity of the film.

Ferroelectric domain wall memory with embedded selector realized in LiNbO single crystals integrated on Si wafers.

Interfacial 'dead' layers between metals and ferroelectric thin films generally induce detrimental effects in nanocapacitors, yet their peculiar properties can prove advantageous in other electronic devices. Here, we show that dead layers with low Li concentration located at the surface of LiNbO ferroelectric materials can function as unipolar selectors. LiNbO mesa cells were etched from a single-crystal LiNbO substrate, and Pt metal contacts were deposited on their sides.

Improved Ferroelectric Performance of Mg-Doped LiNbO Films by an Ideal Atomic Layer Deposited AlO Tunnel Switch Layer.

Bilayer structures composed of 5% Mg-doped LiNbO single-crystal films and ultrathin AlO layers with thickness ranging from 2 to 6 nm have been fabricated by using ion slicing technique combined with atomic layer deposition method. The transient domain switching current measurement results reveal that the P-V hysteresis loops are symmetry in type II mode with single voltage pulse per cycle, which may be attributed to the built-in electric field formed by asymmetric electrodes and compensation of an internal imprint field. Besides, the inlaid AlO, as an ideal tunnel switch layer, turns on during ferroelectric switching, but closes during the post-switching or non-switching under the applied pulse voltage.

[Reducing the maize amylopectin content through RNA interference manipulation].

To regulate the biosynthesis of maize starch, gene segment of starch branch enzyme (SBE) in maize was cloned and an expression vector of small interference RNA with the fragment of antisense gene + sense gene (pCJSBE2b, Fig.1) was constructed. The expression vector of pCJSBE2b was transformed into maize inbred lines by using pollen-tube pathway.