Native Defect-Dependent Ultrafast Carrier Dynamics in p-Type Dopable Wide-Bandgap NiO.

NiO is a wide-bandgap p-type metal oxide that has extensive applications in optoelectronics and photocatalysts. Understanding the carrier dynamics in p-type NiO is pivotal for optimizing device performance, yet they remain largely unexplored. In this study, we employed femtosecond transient absorption spectroscopy to delve into the dynamics of photogenerated carriers in NiO films containing distinct prominent native defects: undoped NiO with oxygen vacancies () and O-rich NiO (denoted as NiO) with nickel vacancies ().

Synthesis of salcaprozate sodium and its significance in enhancing pancreatic kininogenase absorption performance.

We conducted pharmacokinetic research wherein salcaprozate sodium (SNAC) was utilized as a penetration enhancer by incorporating it into pancreatic kininogenase (PK) to improve the bioavailability of pancreatic kininogenase enteric-coated tablets. We conducted in vitro studies on PK using the Caco-2 cell model and quantified PK levels using the enzyme-linked immunosorbent assay (ELISA) method. We conducted methodological verification by blending SNAC and PK powders into enteric-coated capsules, and studied the pharmacokinetic characteristics.

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films.

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques.

Effects of oxygen flow ratio and thermal annealing on defect evolution of aluminum doped zinc oxide thin films by reactive DC magnetron sputtering.

Al doped ZnO (AZO) is a promising transparent conducting oxide to replace the expensive Sn doped InO(ITO). Understanding the formation and evolution of defects in AZO is essential for its further improvement. Here, we synthesize transparent conducting AZO thin films by reactive DC magnetron sputtering.