Chemical vapor deposition growth of ReS nanowires for high-performance nanostructured photodetector.

Rhenium disulfide (ReS2) is a recently discovered next-generation transition metal dichalcogenides (TMDs) material that exhibits unique properties, which have resulted in its wide use in the fabrication of electronic and optoelectronic devices. Studies on ReS2 have mainly focused on the synthesis and applications of two-dimensional (2D) materials, while studies on one-dimensional (1D) ReS2 have yet to be reported. Herein, 1D single-crystal ReS2 nanowires have been synthesized successfully for the first time via chemical vapor deposition (CVD) and utilized as the active layer in a nanostructured photodetector.

Self-powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed.

In this study, we design and demonstrate a novel type of self-powered UV photodetectors (PDs) using single-crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self-powered UV PDs with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as-assembled PDs have a high on/off ratio of 19173 and a fast response speed (τ = 0.

One-step fabrication of single-crystalline ZnS nanotubes with a novel hollow structure and large surface area for photodetector devices.

ZnS nanotubes (NTs) were successfully prepared via a one-step thermal evaporation process without using any templates. The resulting NTs were single crystalline and structurally uniform. Based on experimental analysis, a tube-growth vapor-liquid-solid process was proposed as the growth mechanism of ZnS NTs.

High-Performance Fully Nanostructured Photodetector with Single-Crystalline CdS Nanotubes as Active Layer and Very Long Ag Nanowires as Transparent Electrodes.

Long and single-crystalline CdS nanotubes (NTs) have been prepared via a physical evaporation process. A metal-semiconductor-metal full-nanostructured photodetector with CdS NTs as active layer and Ag nanowires (NWs) of low resistivity and high transmissivity as electrodes has been fabricated and characterized. The CdS NTs-based photodetectors exhibit high performance, such as lowest dark currents (0.

Synthesis and field emission studies of tower-like GaN nanowires.

Unlabelled: Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets.

Nanointerlayer induced electroluminescence transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction.

High-quality Mn:ZnO (MZO) film had been prepared on N-GaN coated sapphire substrates followed by postdeposition thermal annealing treatment at 700 °C. For the annealed MZO/GaN heterojunction, a 15 nm cubic structural ZnGa(2)O(4) layer was observed at the MZO/GaN interface through transmission electron microscope analysis. Through electroluminescence (EL) measurement, the formation of the nanointerface results in an EL transition from ultraviolet- to red-dominant mode for n-Mn:ZnO/N-GaN heterojunction light-emitting diodes (LEDs).