Publications by authors named "Xiangzhao Wang"

The optical distortion of the lithographic projection lens can reduce imaging quality and cause overlay errors in lithography, thus preventing the miniaturization of printed patterns. In this paper, we propose a technique to measure the optical distortion of a lithographic projection lens by sensing the wavefront aberrations of the lens. A multichannel dual-grating lateral shearing interferometer is used to measure the wavefront aberrations at several field points in the pupil plane simultaneously.

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Double-Ronchi shearing interferometry is a promising wavefront aberration measurement system for advanced lithography projection lens systems. The image grating defocusing is a key systematic error of the interferometer. However, the effects and elimination of this error have not been systematically researched.

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Optical coherence tomography (OCT) provides unique advantages in ophthalmic examinations owing to its noncontact, high-resolution, and noninvasive features, which have evolved into one of the most crucial modalities for identifying and evaluating retinal abnormalities. Segmentation of laminar structures and lesion tissues in retinal OCT images can provide quantitative information on retinal morphology and reliable guidance for clinical diagnosis and treatment. Convolutional neural networks (CNNs) have achieved success in various medical image segmentation tasks.

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The multilayer defects of mask blanks in extreme ultraviolet (EUV) lithography may cause severe reflectivity deformation and phase shift. The profile information of a multilayer defect is the key factor for mask defect compensation or repair. This paper introduces an artificial neural network framework to reconstruct the profile parameters of multilayer defects in the EUV mask blanks.

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The lateral resolution of the optical-resolution photoacoustic microscopy (OR-PAM) system depends on the focusing diameter of the probe beam. By increasing the numerical aperture (NA) of optical focusing, the lateral resolution of OR-PAM can be improved. However, the increase in NA results in smaller working distances, and the entire imaging system becomes very sensitive to small optical imperfections.

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Double-Ronchi shearing interferometry is a promising technique for insitu wavefront aberration measurement of the projection lens in photolithography systems. In practice, the non-uniformity of illumination is an important issue affecting the interference field, which has not been systematically researched. In this work, the interference field errors caused by non-uniform illumination distributions are analyzed utilizing the theories of scalar diffraction.

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Extreme ultraviolet (EUV) multilayer defects result in the degradation of through-focus imaging quality. The optical proximity effect is another crucial factor that degrades the imaging quality. Both the impacts of the defects and the optical proximity effects could be mitigated by modifying the original mask patterns.

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Skin-elasticity measurements can assist in the clinical diagnosis of skin diseases, which has important clinical significance. Accurately determining the depth-resolved elasticity of superficial biological tissue is an important research direction. This paper presents an optical coherence elastography technique that combines surface acoustic waves and shear waves to obtain the elasticity of multilayer tissue.

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Optical coherence tomography (OCT) is a high-resolution and non-invasive optical imaging technology, which is widely used in many fields. Nevertheless, OCT images are disturbed by speckle noise due to the low-coherent interference properties of light, resulting in significant degradation of OCT image quality. Therefore, a denoising algorithm of OCT images via sparse representation based on noise estimation and global dictionary is proposed in this paper.

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Ronchi shearing interferometry is a promising technique for in situ wavefront aberration measurement of the projection lens in advanced photolithography systems. The Van Cittert-Zernike theorem has been used to analyze the interference signal of a Ronchi shearing interferometer in the effective interference area (overlapping area of the ±1st diffraction orders produced by the image grating). However, the applicability of this theorem has not been systematically studied.

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Lateral shearing based on the grating is one of the classical configurations when measuring the wavefront aberration of optical systems such as the lithographic projection lens. Because the wavefront under test is spherical, but a detector surface is a plane, the coordinate of the wavefront surface will be distorted on the detector surface. As the numerical aperture (NA) of the optics under test increases, the shear ratios at different positions within the shearing region are significantly different due to the coordinate distortion.

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Wafer alignment is the core technique of lithographic tools. Image-processing-based wafer alignment techniques are commonly used in lithographic tools. An alignment algorithm is used to analyze the alignment mark image for obtaining the mark position.

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Wavefront aberration is one important parameter for objective lenses. When the NA (Numerical Aperture) of the objective lens becomes larger than 0.8, wavefront aberration measurement with high accuracy and low cost is difficult to realize because of the lack of a reference sphere.

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Extreme ultraviolet (EUV) lithography is essential in the advanced technology nodes. Source mask optimization (SMO) for EUV lithography, especially the heuristic-based SMO, is one of the vital resolution enhancement techniques (RET). In this paper, a fast SMO method for EUV based on dual edge evolution and partial sampling strategies is proposed to improve the optimization efficiency and speed of the heuristic algorithm.

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We propose a novel measurement algorithm for wafer alignment technology based on principal component analysis (PCA) of a mark image. The waveform of the mark is extracted from the enlarged mark image, which is collected by CCD. The position of the mark center on the CCD can be calculated based on the extracted waveform.

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A fast mask model for extreme ultraviolet (EUV) lithography is vital to process simulation and resolution enhancement techniques. As the target pattern sizes have decreased, the impact of the absorber sidewall angle (SWA) has become a serious problem. In order to model the EUV mask with a slanted absorber sidewall quickly and accurately, a fast mask model based on the absorber sublayer decomposition is proposed.

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Optical proximity correction (OPC) is a widely used resolution enhancement technique (RET) in optical lithography to improve the image fidelity and process robustness. The efficiency of OPC is very important, especially for full-chip modification with complicated circuit layout in advanced technology nodes. An efficient OPC method based on virtual edge and mask pixelation with two-phase sampling is proposed in this paper.

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The profile deformation of a phase defect in an extreme ultraviolet (EUV) mask blank is the key factor to simulate its optical effects accurately and to compensate for it precisely. This paper provides a new, to the best of our knowledge, profile characterization method based on complex amplitudes of the aerial images for phase defects in EUV mask blanks. Fourier ptychography is adopted to retrieve the complex amplitudes of the aerial images and improve the lateral resolution.

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Extreme ultraviolet (EUV) lithography plays a vital role in the advanced technology nodes of integrated circuits manufacturing. Source mask optimization (SMO) is a critical resolution enhancement technique (RET) or EUV lithography. In this paper, an SMO method for EUV lithography based on the thick mask model and social learning particle swarm optimization (SL-PSO) algorithm is proposed to improve the imaging quality.

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Lateral shearing interferometry is widely applied in wavefront sensing, optical components testing, and defect inspection. The procedure of reconstructing the wavefront is the most specific difference between lateral shearing interferometry and other classical methods such as the Fizeau and Twyman interferometers. The speed and accuracy are two main features to evaluate the performance of one wavefront reconstruction method.

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Source mask optimization (SMO) is one of the indispensable resolution enhancement techniques to guarantee the image fidelity and process robustness for the 2Xnm technology node and beyond. The optimization capacity and convergence efficiency of SMO are important, especially for full-chip SMO. An SMO method using the covariance matrix adaptation evolution strategy (CMA-ES), together with a new source representation method, is proposed in this paper.

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The calculation of extreme ultraviolet (EUV) mask diffraction spectrum is the key of EUV lithography simulation. In this paper, a fast rigorous EUV mask model is proposed to calculate the diffraction spectrum fast and accurately. Based on the mask structure decomposition method, the relationship among the region diffraction, the boundary diffraction of the absorber, and the direction of incident light is analyzed at first.

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Source and mask optimization (SMO) is one of the most important resolution enhancement techniques for integrated circuit manufacturing in 2X nm technology node and beyond. Nowadays full-chip SMO is alternatively realized by applying SMO to limited number of selected critical patterns instead of to full-chip area, since it is too computational expensive to be apply SMO in full-chip area directly. The critical patterns are selected by a pattern selection method which enables SMO in full-chip application by balancing the performance and computation consumption.

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A dual-fiber point diffraction interferometer is built to measure the wavefront aberration of an imaging system with high precision. The optical intensity of the test light and reference light are controlled independently, so that high interference contrast can be obtained. The interferometer has several advantages: high precision, a flexible structure, and a quasi-common optical path.

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Freeform illumination is one of the necessary techniques in 28 nm technology nodes and beyond. The micromirror array (MMA) has been widely used in lithography freeform illumination systems due to its programmability and high free degree. The MMA allocation algorithm is the key to generate the target freeform illumination source.

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