The optoelectronic effects of sidewall passivation on micro-light-emitting diodes (Micro-LEDs) were investigated using sol-gel chemical synthesis. Blue InGaN/GaN multi-quantum well (MQW) Micro-LEDs, ranging in size from 20 × 20 μm to 100 × 100 μm and with high EQE, were fabricated and distinguished by the passivation method used, including no passivation, sol-gel SiO, and plasma-enhanced chemical vapor deposition (PECVD) SiO. Impressively, the sol-gel method is advantageous in improving the optoelectronic performance of Micro-LEDs.
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