Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC.

Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding. However, the interlayer of the bonding interface and the reduced layer thickness may affect thermal transport. In this study, the temperature-dependent cross-plane thermal conductivity of 4H-SiC thin films and the effective thermal boundary resistance (TBR) of the bonding SiC-on-SiC are measured by the multiple-probe wavelength nanosecond transient thermoreflectance (MW-TTR).