Band-Offset Analysis of Atomic Layer Deposition LaO on GaAs(111), (110), and (100) Surfaces for Epitaxial Growth.

In this paper, we measured band offsets for LaO prepared by atomic layer deposition on GaAs(111), (110), and (100) surfaces. LaO grows epitaxially on GaAs(111) with very low interfacial defect density and exhibits a band offset that is predicted for defect-free interfaces by the metal-induced gap state theory. On the other hand, the polycrystalline LaO deposited on GaAs(110) and (100) shows band offsets close to the values predicted for Fermi-level pinning.

Temperature dependent photoluminescence of composition tunable ZnAgInSe quantum dots and temperature sensor application.

Quantum dots (QDs) exhibit not only wide tunability of luminescence but also complex optical properties because of the large degree of freedom in their structure and chemical composition. Quaternary ZnAgInSe QDs with different Zn/Ag ratios were synthesized and examined as temperature sensors. The relationship among the luminescence energy, emission intensity, and full-width at half-maximum (FWHM) of the emission band at different temperatures was investigated.

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation.

In advanced microelectronics, precise design of liner and capping layers become critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline, and highly conformal Co films with highly controllable growth characteristics.

Epitaxial Growth of MgCaO on GaN by Atomic Layer Deposition.

We demonstrate for the first time that a single-crystalline epitaxial MgCaO film can be deposited on gallium nitride (GaN) by atomic layer deposition (ALD). By adjusting the ratio between the amounts of Mg and Ca in the film, a lattice matched MgCaO/GaN(0001) interface can be achieved with low interfacial defect density. High-resolution X-ray diffraction (XRD) shows that the lattice parameter of this ternary oxide nearly obeys Vegard's law.

Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines.

We have prepared two new Ca(II) amidinates, which comprise a new class of ALD precursors. The syntheses proceed by a direct reaction between Ca metal and the amidine ligands in the presence of ammonia. Bis(N,N'-diisopropylformamidinato)calcium(II) (1) and bis(N,N'-diisopropylacetamidinato)calcium(II) (2) adopt dimeric structures in solution and in the solid state.

A novel gold-catalyzed chemoselective reduction of alpha,beta-unsaturated aldehydes using CO and H2O as the hydrogen source.

Chemoselective reduction of alpha,beta-unsaturated aldehydes in the presence of CO and H(2)O proceeds effectively over a ceria-supported gold catalyst system, providing a novel, efficient and clean approach to produce useful primary allyl alcohols with excellent activity and selectivity.