Growth of ultrathin films of amorphous ruthenium-phosphorus alloys using a single source CVD precursor.

Thin films ( approximately 30 nm) of amorphous RuP alloys (P approximately 15-20%) can be grown by CVD from the single source precursor cis-H2Ru(PMe3)4 at 250-300 degrees C and 200 mTorr pressure on native SiO2.