Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer.

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.

Probing Interfacial Charge Transfer between Amyloid-β and Graphene during Amyloid Fibrillization Using Raman Spectroscopy.

Charge transfer plays a key role in the structural transformation of amyloid-β proteins (Aβs), as it fibrillizes from small monomers to intermediate oligomers and to ordered fibrils. While the protein fibrillization states have been identified using cryo-electron microscopy, X-ray diffraction, Raman, infrared, terahertz spectroscopies, , there is little known about the electronic states during the fibrilization of Aβ protein. Here, we probe the charge transfer of Aβ proteins at different aggregation stages adsorbed on monolayer graphene (Gr) and molybdenum disulfide (MoS) using Raman spectroscopy.

Subwavelength Terahertz Resonance Imaging (STRING) for Molecular Fingerprinting.

Subwavelength terahertz (THz) imaging methods are highly desirable for biochemical sensing as well as materials sciences, yet sensitive spectral fingerprinting is still challenging in the frequency domain due to weak light-matter interactions. Here, we demonstrate subwavelength THz resonance imaging (STRING) that overcomes this limitation to achieve ultrasensitive molecular fingerprinting. STRING combines individual ring-shaped coaxial single resonators with near-field spectroscopy, yielding considerable sensitivity gains from both local field enhancement and the near-field effect.

Hollow Atomic Force Microscopy Cantilevers with Nanoscale Wall Thicknesses.

In atomic force microscopy, the cantilever probe is a critical component whose properties determine the resolution and speed at which images with nanoscale resolution can be obtained. Traditional cantilevers, which have moderate resonant frequencies and high quality factors, have relatively long response times and low bandwidths. In addition, cantilevers can be easily damaged by excessive deformation, and tips can be damaged by wear, requiring them to be replaced frequently.

Micron-gap spacers with ultrahigh thermal resistance and mechanical robustness for direct energy conversion.

In thermionic energy converters, the absolute efficiency can be increased up to 40% if space-charge losses are eliminated by using a sub-10-µm gap between the electrodes. One practical way to achieve such small gaps over large device areas is to use a stiff and thermally insulating spacer between the two electrodes. We report on the design, fabrication and characterization of thin-film alumina-based spacers that provided robust 3-8 μm gaps between planar substrates and had effective thermal conductivities less than those of aerogels.

Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric-Field Effect.

Transition metal dichalcogenides (TMDs) have emerged as promising materials to complement graphene for advanced optoelectronics. However, irreversible degradation of chemical vapor deposition-grown monolayer TMDs via oxidation under ambient conditions limits applications of TMD-based devices. Here, the growth of oxidation-resistant tungsten disulfide (WS ) monolayers on graphene is demonstrated, and the mechanism of oxidation of WS on SiO , graphene/SiO , and on graphene suspended in air is elucidated.

Strong interfacial exchange field in the graphene/EuS heterostructure.

Exploiting 2D materials for spintronic applications can potentially realize next-generation devices featuring low power consumption and quantum operation capability. The magnetic exchange field (MEF) induced by an adjacent magnetic insulator enables efficient control of local spin generation and spin modulation in 2D devices without compromising the delicate material structures. Using graphene as a prototypical 2D system, we demonstrate that its coupling to the model magnetic insulator (EuS) produces a substantial MEF (>14 T) with the potential to reach hundreds of tesla, which leads to orders-of-magnitude enhancement of the spin signal originating from the Zeeman spin Hall effect.