Transparent p-CuI/n-BaSnO heterojunctions with a high rectification ratio.

Transparent p-CuI/n-BaSnO heterojunction diodes were successfully fabricated by the thermal evaporation of a (1 1 1) oriented γ-phase CuI film on top of an epitaxial BaSnO (0 0 1) film grown by the pulsed laser deposition. Upon the thickness of the CuI film being increased from 30 to 400 nm, the hole carrier density was systematically reduced from 6.0  ×  10 to 1.