Oxide semiconductors have gradually replaced amorphous and polycrystalline silicon for thin-film transistor (TFT) because of their high mobility and large-area uniformity. Especially, the oxide semiconductors have also achieved the low-cost manufacturing using a solution process. However, because the solution-processed oxide semiconductors require a high thermal energy to form the oxide thin film, the additional solution synthesis and annealing process are needed for low-temperature solution process.
View Article and Find Full Text PDFThin-film transistors (TFTs) with multistacked active layers (MSALs) have been studied to improve their electrical performance. The performance enhancement with MSALs has been attributed to higher film density in the effective channel; the density was higher because the porosities of the sublayers were reduced by filling with solution. The proposed TFT with MSALs exhibited an enhanced field-effect mobility of 2.
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