Highly size-controlled synthesis of metal nanoclusters by inert-gas condensation for nano-devices.

Metal nanoclusters were fabricated by inert-gas condensation in a sputtering reactor. From transmission electron microscopy, it was confirmed that copper nanoclusters with a high degree of monodispersity in size of about 5 nm were successfully produced. The conductance of the percolated nanocluster film was measured.

Electron holography study for two-dimensional dopant profile measurement with specimens prepared by backside ion milling.

The visualization of two-dimensional dopant profiles and the quantitative analysis of the built-in potential across the p-n junction, DeltaV(p-n), by electron holography were carried out with specimens prepared from the backside ion milling method combined with the focused ion beam technique. It was possible to obtain dopant profiling of the large field of view with low surface damage and gradually changed thickness. From the quantitative analysis using the phase information of electron holography and the thickness information of electron energy-loss spectroscopy, DeltaV(p-n) was estimated to be about 0.