Mesoporous Al-doped ZnO thin films incorporated with gold nanoparticles (Au NPs) were synthesized using a sol-gel and evaporation-induced self-assembly process. In this study, the complementary effects of Au NP incorporation and Al doping on the thermoelectric properties of mesoporous ZnO thin films were analysed. The incorporated Au NPs induced an increase in electrical conductivity but a detriment in the pore arrangement of the mesoporous ZnO thin film, which was accompanied by a decrease in porosity.
View Article and Find Full Text PDFZinc oxide (ZnO) nanocrystals (NCs) were synthesized using a modified sol-gel method. Ultraviolet (UV) treatment was performed under various atmospheres on the highly stacked ZnO NCs. The prepared NCs were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy, and atomic force microscopy to investigate their structural, electrical, and electrochemical properties.
View Article and Find Full Text PDFFluoropolymer nanocomposites of poly(vinylidene fluoride-co-hexafluoropropylene) (PVdF-HFP) were prepared using fluorinated barium strontium titanate (BaSrTiO, BSTO) nanoparticles (NPs) by low-temperature synthesis using a modified liquid-solid solution process. The exact stoichiometry of as-synthesized BSTO NPs was confirmed by X-ray diffraction analysis along with lattice parameter calculations. The synthesized BSTO NPs were fluorinated using 2,2,2-trifluoroacetic acid as a fluorous ligand.
View Article and Find Full Text PDFNanoscale ZnO is one of the best choices for ultraviolet (UV) protection, not only because of its antimicrobial properties but also due to its potential application for UV preservation. However, the behavior of nanostructured thin ZnO films and long-term effects of UV-radiation exposure have not been studied yet. In this study, we investigated the UV-protection ability of sol gel-derived thin ZnO films after different exposure times.
View Article and Find Full Text PDFCross-point array (CPA) structure memories using a memristor are attracting a great deal of attention due to their high density integration with a 4F2 cell. However, a common significant drawback of the CPA configuration is crosstalk between cells. To date, the CPA structure using a redox-based memristor has restrictions to minimize the operating current level due to their resistive switching mechanism.
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