Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure.

The oxygen vacancies and hydrogen in oxide semiconductors are regarded as the primary sources of charge carriers and various studies have investigated the effect of hydrogen on the properties of oxide semiconductors. However, the carrier generation mechanism between hydrogen and oxygen vacancies in an a-IGZO semiconductor has not yet been clearly examined. In this study we investigated the effect of hydrogen and the variation mechanisms of electrical properties of a thin film supplied with hydrogen from the passivation layer.

Effect of Mg ion bioactivity on the TiO2 nano-network surface.

Magnesium (Mg) ion is well known for improving the Ca-P nucleation and growth. TiO2 nano-network (NT) surface was prepared by alkali-treatment. To introduce the Mg ion to TiO2 NT surface, acrylic acid plasma polymerization was used.