SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal.
View Article and Find Full Text PDFHeavily doped degenerate semiconductors such as CuSnSe (CTSe) attracted attention in thermoelectric (TE) and optoelectronic fields, due to their high electrical conductivity and small band gap. The small Seebeck coefficient of undoped CTSe, however, is the major issue in achieving high TE performance (figure of merit, ZT). Here, we report that the Seebeck coefficient of CTSe can be controlled by adding SnS within a CTSe matrix.
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