α-InSe semiconductor crystals realize artificial synapses by tuning in-plane and out-of-plane ferroelectricity with diverse avenues of electrical and optical pulses. While the electrically induced ferroelectricity of α-InSe shows synaptic memory operation, the optically assisted synaptic plasticity in α-InSe has also been preferred for polarization flipping enhancement. Here, the synaptic memory behavior of α-InSe is demonstrated by applying electrical gate voltages under white light.
View Article and Find Full Text PDFThe demand for fast-charging lithium-ion batteries (LIBs) with long cycle life is growing rapidly due to the increasing use of electric vehicles (EVs) and energy storage systems (ESSs). Meeting this demand requires the development of advanced anode materials with improved rate capabilities and cycling stability. Graphite is a widely used anode material for LIBs due to its stable cycling performance and high reversibility.
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