Observation of oscillatory resistance behavior in coupled Bernal and rhombohedral stacking graphene.

We report on the first observation of an anomalous temperature-dependent resistance behavior in coupled Bernal and rhombohedral stacking graphene. At low-temperature regime (<50 K) the temperature-dependent resistance exhibits a drop while at high-temperature regions (>250 K), the resistance increases. In the transition region (50-250 K) an oscillatory resistance behavior was observed.

Effect of magnetic field on the electronic transport in trilayer graphene.

The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature.