Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the desirable but contrasting requirements of spin robustness against relaxation mechanisms and sizeable coupling between spin and orbital motion of the carriers. Here, we focus on Ge, which is a prominent candidate for shuttling spin quantum bits into the mainstream Si electronics.

Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si.

Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we present a model for the microscopic origin of the radiative transitions leading to enhanced photoluminescence (PL) from such GIB-QDs. We provide an energy level scheme for GIB-QDs in a crystalline Si matrix that is based on atomistic modeling with Monte Carlo (MC) analysis and density functional theory (DFT).

Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor optoelectronic properties of bulk Si and Ge. Here we demonstrate that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB).

Integration, photostability and spontaneous emission rate enhancement of colloidal PbS nanocrystals for Si-based photonics at telecom wavelengths.

We experimentally investigate PbS nanocrystal (NC) photoluminescence (PL) coupled to all-integrated Si-based ring resonators and waveguides at telecom wavelengths. Dissolving the NCs into Novolak polymer significantly improves their stability in ambient atmosphere. Polymer-NC blends of various NC concentrations can be applied to and removed from the same device.

Sb-mediated Ge quantum dots in Ti-oxide-Si diode: negative differential capacitance.

The negative differential capacitance (NDC) effect is observed on a titanium-oxide-silicon structure, formed on n-type silicon with embedded germanium quantum dots (QDs). The Ge QDs were grown by an Sb-mediated technique. The NDC effect was observed for temperatures below 200 K.

Hybrid nanoimprinted laser based on conjugated conductive polymer and nanocrystal quantum dots.

A composite of the conjugate conductive polymer poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and CdSe/ZnS quantum dots (QDs) is utilized for nanoimprinted lasers after drop-casting onto one-dimensional omnidirectional Bragg mirrors. Strong amplified spontaneous emission is observed at the resonances of both the QDs and the polymer. Clearly resolved, low-threshold lasing was found after nanoimprinting of distributed-feedback gratings on the composite surface.

Si rib waveguide photodetector with an ordered array of Ge islands for 1.5 microm.

This work demonstrates a rib waveguide photodetector based on a vertical Si p-i-n junction with Ge islands operating in the spectral region around lambda=1.55 microm at room temperature. A vertical stack of four layers of Ge islands is grown by molecular beam epitaxy on a silicon-on-insulator.

g-factor tuning and manipulation of spins by an electric current.

We investigate the Zeeman splitting of the two-dimensional electron gas in an asymmetric silicon quantum well, performing electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba type of spin-orbit field. We also show that a high frequency current may induce electric dipole spin resonance very efficiently.