Nucleation and growth of zinc-templated mesoporous selenium nanoparticles and potential non-thermal effects during their microwave-assisted synthesis.

The effects of 5.8-GHz microwave (MW) irradiation on the synthesis of mesoporous selenium nanoparticles (mSeNPs) in aqueous medium by reduction of selenite ions with ascorbic acid, using zinc nanoparticles as a hard template and cetyltrimethylammonium bromide (CTAB) as a micellar template, are examined for the first time with a particular emphasis on MW-particle interactions and the NPs morphology. This MW-assisted synthesis is compared to 2.

A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios.

Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.