Nanohardness and Young's Modulus of PbCdTe Crystals Grown by the SSVG and MBE Methods.

The nanohardness and Young's modulus of PbCdTe single crystals prepared by the self-selecting vapor growth (SSVG) method and thick, MBE-grown layers with a total Cd content of up to 7% metal atoms were studied using the nanoindentation technique; the nanohardness and Young's modulus were calculated by the Oliver and Pharr method. Significant hardening of SSVG crystals with increasing number of Cd atoms replacing Pb atoms in the formed solid solution was observed, and low anisotropy of the nanohardness and Young's modulus were found. The CdTe solubility limit in the solid solution grown using an MBE equal to 2.

Phonon mode potential and its contribution to anharmonism.

We present systematic ab-initio study on the phonon mode potential as a source of anharmonicity in the crystal. As an example, the transverse optical (TO) mode potential in PbTe has been fitted to density-functional-theory calculated energies of phonons excited with different amplitudes of mode displacements. The corresponding equation of motion has been analytically and numerically solved in 1D and 2D space, respectively.

All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy.

Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated. (In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {11̅00} side facets of the cores at much lower temperature (220 °C). High-resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure.

Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates.

Mn-doped GaAs nanowires were grown in the self-catalytic growth mode on the oxidized Si(100) surface by molecular beam epitaxy and characterized by scanning and transmission electron microscopy, Raman scattering, photoluminescence, cathodoluminescence, and electron transport measurements. The transmission electron microscopy studies evidenced the substantial accumulation of Mn inside the catalyzing Ga droplets on the top of the nanowires. Optical and transport measurements revealed that the limit of the Mn content for self-catalysed growth of GaAs nanowires corresponds to the doping level, i.

Zn(1-x)MnxTe diluted magnetic semiconductor nanowires grown by molecular beam epitaxy.

It is shown that the growth of II-VI diluted magnetic semiconductor nanowires is possible by the catalytically enhanced molecular beam epitaxy (MBE). Zn(1-x)MnxTe NWs with manganese content up to x=0.60 were produced by this method.