Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals-Experimental Validation of Analytical Approach.

Absorption spectra of AlGaN/GaN grating-gate plasmonic crystals with a period from 1 µm to 2.5 µm were studied experimentally at = 70 K using Fourier-transform infrared spectrometry. The plasmonic crystals exhibit distinct absorption lines of various plasmon harmonics across the 0.

Strong transient magnetic fields induced by THz-driven plasmons in graphene disks.

Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect.

Sub-terahertz feedback interferometry and imaging with emitters in 130 nm BiCMOS technology.

In this work, we present the effect of self-mixing in compact terahertz emitters implemented in a 130 nm SiGe BiCMOS technology. The devices are based on a differential Colpitts oscillator topology with optimized emission frequency at the fundamental harmonic. The radiation is out-coupled through the substrate side using a hyper-hemispheric silicon lens.

Nature of the 1/ noise in graphene-direct evidence for the mobility fluctuation mechanism.

The nature of the low-frequency 1/ noise in electronic materials and devices is one of the oldest unsolved physical problems ( is the frequency). The fundamental question of the noise source-fluctuations in the mobility . number of charge carriers-is still debated.

Graphene-based plasmonic metamaterial for terahertz laser transistors.

This paper reviews recent advances in the research and development of graphene-based plasmonic metamaterials for terahertz (THz) laser transistors. The authors' theoretical discovery on THz laser transistors in 2007 was realized as a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) in 2018, demonstrating ∼0.1 µW single-mode emission at 5.

Enhanced terahertz detection of multigate graphene nanostructures.

Terahertz (THz) waves have revealed a great potential for use in various fields and for a wide range of challenging applications. High-performance detectors are, however, vital for exploitation of THz technology. Graphene plasmonic THz detectors have proven to be promising optoelectronic devices, but improving their performance is still necessary.

Characterization of Silver Nanowire Layers in the Terahertz Frequency Range.

Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing densities at THz frequencies.

Graphene/AlGaN/GaN RF Switch.

RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar waveguide, which allows them to be used in any system without the use of, e.

Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz Frequencies.

Low-dimensional nanosystems are promising candidates for manipulating, controlling, and capturing photons with large sensitivities and low noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising of efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electron physics to develop millimeter-wave nanodetectors employing as a sensing element an InAs/InAsP quantum-dot nanowire, embedded in a single-electron transistor.

All-Electronic Emitter-Detector Pairs for 250 GHz in Silicon.

The spread of practical terahertz (THz) systems dedicated to the telecommunication, pharmacy, civil security, or medical markets requires the use of mainstream semiconductor technologies, such as complementary metal-oxide-semiconductor (CMOS) lines. In this paper, we discuss the operation of a CMOS-based free space all-electronic system operating near 250 GHz, exhibiting signal-to-noise ratio (SNR) with 62 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines the state-of-the-art detector based on CMOS field-effect-transistors (FET) and a harmonic voltage-controlled oscillator (VCO).

Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics.

AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the subthreshold slope and adjusting the threshold voltage. At a certain back gate voltage, transistors operated as normally-off devices.

Roadmap of Terahertz Imaging 2021.

In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components.

Sensitivity of Field-Effect Transistor-Based Terahertz Detectors.

This paper presents an overview of the different methods used for sensitivity (i.e., responsivity and noise equivalent power) determination of state-of-the-art field-effect transistor-based THz detectors/sensors.

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN-SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor at approximately 1.

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures.

Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φ = (1.

Graphene Epoxy-Based Composites as Efficient Electromagnetic Absorbers in the Extremely High-Frequency Band.

We report on the synthesis of the epoxy-based composites with graphene fillers and test their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high-frequency (EHF) band (220-325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of few-micrometer lateral dimensions. It was found that the electromagnetic transmission, , is low even at small concentrations of graphene fillers: <1% at a frequency of 300 GHz for a composite with only ϕ = 1 wt% graphene.

Magnetoconductivity and Terahertz Response of a HgCdTe Epitaxial Layer.

An epitaxial layer of HgCdTe-a THz detector-was studied in magnetotransmission, magnetoconductivity and magnetophotoconductivity experiments at cryogenic temperatures. In the optical measurements, monochromatic excitation with photon frequency ranging from 0.05 THz to 2.

Terahertz Detection and Imaging Using Graphene Ballistic Rectifiers.

A graphene ballistic rectifier is used in conjunction with an antenna to demonstrate a rectenna as a terahertz (THz) detector. A small-area (<1 μm) local gate is used to adjust the Fermi level in the device to optimize the output while minimizing the impact on the cutoff frequency. The device operates in both n- and p-type transport regimes and shows a peak extrinsic responsivity of 764 V/W and a corresponding noise equivalent power of 34 pW Hz at room temperature with no indications of a cutoff frequency up to 0.

Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays.

We present the concept, the fabrication processes and the experimental results for materials and optics that can be used for terahertz field-effect transistor detector focal plane arrays. More specifically, we propose 3D printed arrays of a new type - diffractive multi-zone lenses of which the performance is superior to that of previously used mono-zone diffractive or refractive elements and evaluate them with GaN/AlGaN field-effect transistor terahertz detectors. Experiments performed in the 300-GHz atmospheric window show that the lens arrays offer both a good efficiency and good uniformity, and may improve the signal-to-noise ratio of the terahertz field-effect transistor detectors by more than one order of magnitude.

Heterostructured hBN-BP-hBN Nanodetectors at Terahertz Frequencies.

By reassembling thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene black phosphorus (BP), hBN/BP/hBN heterostructures are mechanically stacked to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range, from 4 K to 300 K, with a record signal-to-noise ratio of 20 000.

Efficient Terahertz detection in black-phosphorus nano-transistors with selective and controllable plasma-wave, bolometric and thermoelectric response.

The ability to convert light into an electrical signal with high efficiencies and controllable dynamics, is a major need in photonics and optoelectronics. In the Terahertz (THz) frequency range, with its exceptional application possibilities in high data rate wireless communications, security, night-vision, biomedical or video-imaging and gas sensing, detection technologies providing efficiency and sensitivity performances that can be "engineered" from scratch, remain elusive. Here, by exploiting the inherent electrical and thermal in-plane anisotropy of a flexible thin flake of black-phosphorus (BP), we devise plasma-wave, thermoelectric and bolometric nano-detectors with a selective, switchable and controllable operating mechanism.

Improvement of terahertz field effect transistor detectors by substrate thinning and radiation losses reduction.

Phenomena of the radiation coupling to the field effect transistors based terahertz (THz) detectors are studied. We show that in the case of planar metal antennas a significant portion of incoming radiation, instead of being coupled to the transistors, is coupled to an antenna substrate leading to responsivity losses and/or cross-talk effects in the field effect based THz detector arrays. Experimental and theoretical investigations of the responsivity versus substrate thickness are performed.

Plasma-Wave Terahertz Detection Mediated by Topological Insulators Surface States.

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states.

Black Phosphorus Terahertz Photodetectors.

The first room-temperature terahertz (THz)-frequency nanodetector exploiting a 10 nm thick flake of exfoliated crystalline black phosphorus as an active channel of a field-effect transistor, is devised. By engineering and embedding planar THz antennas for efficient light harvesting, the first technological demonstration of a phosphorus-based active THz device is described.

Nanowire Terahertz detectors with a resonant four-leaf-clover-shaped antenna.

We report on the development of an innovative class of nanowire-based Terahertz (THz) detectors in which the metamaterial properties of an antenna have been imported in the detection scheme of an overdamped plasma-wave field-effect transistor making its response resonant to THz radiation. Responsivities of ~105 V/W at 0.3 THz, with noise equivalent power levels ≈ 10(-10) W/√Hz, detectivities ~2 · 10(8) cm√Hz/W and quantum efficiencies ~1.