Zinc oxide, due to its unique physicochemical properties, including dual piezoelectric and semiconductive ones, demonstrates a high application potential in various fields, with a particular focus on nanotechnology. Among ZnO nanoforms, nanorods are gaining particular interest. Due to their ability to efficiently transport charge carriers and photoelectric properties, they demonstrate significant potential in energy storage and conversion, as well as photovoltaics.
View Article and Find Full Text PDFIn this work, we report on the fabrication of ZnO thin films doped with Ge via the ALD method. With an optimized amount of Ge doping, there was an improvement in the conductivity of the films owing to an increase in the carrier concentration. The optical properties of the films doped with Ge show improved transmittance and reduced reflectance, making them more attractive for opto-electronic applications.
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