Publications by authors named "Winnerl S"

Emitters based on photoconductive materials excited by ultrafast lasers are well-established and popular devices for THz generation. However, so far, these emitters - both photoconductive antennas and large area emitters - were mostly explored using driving lasers with moderate average powers (either fiber lasers with up to hundreds of milliwatts or Ti:Sapphire systems up to few watts). In this paper, we explore the use of high-power, MHz repetition rate Ytterbium (Yb) based oscillator for THz emission using a microstructured large-area photoconductive emitter, consist of semi-insulating GaAs with a 10 × 10 mm active area.

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As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlGaAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system.

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This study investigates the electronic band structure of chromium sulfur bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis on the PL data robustly unveils energy splittings, band gaps, and excitonic transitions across different thicknesses of CrSBr, from monolayer to bulk.

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We have,, prepared and measured the temperature dependence of thermopower() and resistance() of BiTetopological insulator (TI) thin films in the amorphous and crystalline phase. Samples were prepared by sequential flash-evaporation at liquidHe temperature. The() in the amorphous phase is negative and much larger compared to other known amorphous materials, while in the crystalline phase it is also negative and behaves linearly with the temperature.

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Article Synopsis
  • Field-effect transistors can detect electromagnetic radiation from less than 100 GHz to 30 THz, including important ranges for CO lasers.
  • A study on these transistors reveals how their speed and sensitivity depend on frequency and polarization.
  • There is a transition in detection methods: at lower Terahertz frequencies, the mechanism is ultrafast non-quasistatic rectification, while at higher frequencies (around 10 THz), it shifts to slower rectification influenced by Seebeck and bolometric effects.
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Article Synopsis
  • CrSBr is a layered antiferromagnetic compound that shows strong interactions between its optical, electronic, and magnetic properties, significantly influencing exciton dynamics through exciton-phonon coupling.
  • Low-temperature photoluminescence spectroscopy reveals that satellite peaks in the data mainly result from the coupling between excitons and an optical phonon related to Br atom vibrations at a frequency of 118 cm (∼14.6 meV).
  • Power and temperature-dependent measurements indicate a coupling between magnetic and optical features, suggesting potential for utilizing exciton-phonon coupling in manipulating the optical properties of layered antiferromagnetic semiconductors like CrSBr.
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Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect.

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We study THz-driven condensate dynamics in epitaxial thin films of MgB_{2}, a prototype two-band superconductor (SC) with weak interband coupling. The temperature and excitation density dependent dynamics follow the behavior predicted by the phenomenological bottleneck model for the single-gap SC, implying adiabatic coupling between the two condensates on the ps timescale. The amplitude of the THz-driven suppression of condensate density reveals an unexpected decrease in pair-breaking efficiency with increasing temperature-unlike in the case of optical excitation.

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Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, by both weak and strong light-matter coupling. Here we report experimental evidence of reversible cavity control of a metal-to-insulator phase transition in a correlated solid-state material. We embed the charge density wave material 1T-TaS into cryogenic tunable terahertz cavities and show that a switch between conductive and insulating behaviours, associated with a large change in the sample temperature, is obtained by mechanically tuning the distance between the cavity mirrors and their alignment.

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Radiation sources with a stable carrier-envelope phase (CEP) are highly demanded tools for field-resolved studies of light-matter interaction, providing access both to the amplitude and phase information of dynamical processes. At the same time, many coherent light sources, including those with outstanding power and spectral characteristics lack CEP stability, and so far could not be used for this type of research. In this work, we present a method enabling linear and non-linear phase-resolved terahertz (THz) -pump laser-probe experiments with CEP-unstable THz sources.

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We report here the realization and commissioning of an experiment dedicated to the study of the optical properties of light-matter hybrids constituted of crystalline samples embedded in an optical cavity. The experimental assembly developed offers the unique opportunity to study the weak and strong coupling regimes between a tunable optical cavity in cryogenic environment and low energy degrees of freedom, such as phonons, magnons, or charge fluctuations. We describe here the setup developed that allows for the positioning of crystalline samples in an optical cavity of different quality factors, the tuning of the cavity length at cryogenic temperatures, and its optical characterization with a broadband time domain THz spectrometer (0.

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We report the emission of high-field terahertz pulses from a GaAs large-area photoconductive emitter pumped with a Ti:Sapphire amplifier laser system at 800 nm wavelength and 1 kHz repetition rate. The maximum estimated terahertz electric field at the focus is ≳ 230 kV/cm. We also demonstrate the capability of the terahertz field to cause a non-linear effect, which usually requires high-field terahertz pulses generated through optical rectification or an air plasma.

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We investigate here terahertz enhancement effects arising from micrometer and nanometer structured electrode features of photoconductive terahertz emitters. Nanostructured electrode based emitters utilizing the palsmonic effect are currently one of the hottest topics in the research field. We demonstrate here that even in the absence of any plasmonic resonance with the pump pulse, such structures can improve the antenna effect by enhancing the local d.

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We report the observation of the intersubband AC-Stark effect in a single wide GaAs/AlGaAs quantum well. In a three-level configuration, the n = 2 to n = 3 intersubband transition is resonantly pumped at 3.5 THz using a free-electron laser.

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Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time.

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Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy - reaches only up to 7 THz in the regular transmission mode due to absorption by infrared-active optical phonons.

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We study here the effect of the electrode parameters on the terahertz emission efficiency of large-area emitters based on interdigitated electrodes. Electrode parameters are optimized to get maximum terahertz emission by optimizing the balance condition among the emission efficiency of individual electrode pairs, number of emitters per unit area, and fraction of semiconductor exposed for optical pumping. A maximum enhancement by about 50% in the peak to peak electric field is observed as compared to the previous state of the art design.

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We report a strong shift of the plasma resonance in highly-doped GaAs/InGaAs core/shell nanowires (NWs) for intense infrared excitation observed by scattering-type scanning near-field infrared microscopy. The studied NWs show a sharp plasma resonance at a photon energy of about 125 meV in the case of continuous wave excitation by a CO laser. Probing the same NWs with the pulsed free-electron laser with peak electric field strengths up to several 10 kV cm reveals a power-dependent redshift to about 95 meV and broadening of the plasmonic resonance.

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Comparison of equivalent circuit models (ECM) for photoconductive antennas (PCA) represents a challenge due to the multiphysics phenomena involved during PCA operation and the absence of a standardized validation methodology. In this work, currently reported ECMs are compared using a unique set of simulation parameters and validation indicators (THz waveform, optical power saturation, and ECM voltages consistency). The ECM simulations are contrasted with measured THz pulses of an H-shaped 20μm gap PCA at different optical powers (20mW to 220mW).

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We introduce a scattering-type scanning near-field infrared microscope (s-SNIM) for the local scale near-field sample analysis and spectroscopy from room temperature down to liquid helium (LHe) temperature. The extension of s-SNIM down to T = 5 K is in particular crucial for low-temperature phase transitions, e.g.

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We demonstrate the existence of a novel quasiparticle, an exciton in a semiconductor doubly dressed with two photons of different wavelengths: a near infrared cavity photon and terahertz (THz) photon, with the THz coupling strength approaching the ultrastrong coupling regime. This quasiparticle is composed of three different bosons, being a mixture of a matter-light quasiparticle. Our observations are confirmed by a detailed theoretical analysis, treating quantum mechanically all three bosonic fields.

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Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising behavior, we propose a novel symmetry-breaking defect-assisted relaxation channel. This enables scattering of electrons with single out-of-plane phonons, which drastically accelerate the carrier scattering time in low-quality samples.

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Saturation of carrier occupation in optically excited materials is a well-established phenomenon. However, so far, the observed saturation effects have always occurred in the strong-excitation regime and have been explained by Pauli blocking of the optically filled quantum states. On the basis of microscopic theory combined with ultrafast pump-probe experiments, we reveal a new low-intensity saturation regime in graphene that is purely based on many-particle scattering and not Pauli blocking.

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A low-cost scheme of high-speed asynchronous optical sampling based on Yb:KYW oscillators is reported. Two GHz diode-pumped oscillators with a slight pulse repetition rate offset serve as pump and probe source, respectively. The temporal resolution of this system is limited to 500 fs mainly by the pulse duration of the oscillators and also by relative timing jitter between the oscillators.

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