848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production.

In this paper, fabrication processes of a 0.55-inch 400 × 240 high-brightness active-matrix micro-light-emitting diode (LED) display using GaN-on-Si epi-wafers are described. The micro-LED array, featuring a pixel size of 20 µm × 20 µm and a pixel density of 848 pixels per inch (ppi), was fabricated and integrated with a custom-designed CMOS driver through Au-Sn flip-chip bonding.

Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology.

Colloidal quantum dots which can emit red, green, and blue colors are incorporated with a micro-LED array to demonstrate a feasible choice for future display technology. The pitch of the micro-LED array is 40 μm, which is sufficient for high-resolution screen applications. The method that was used to spray the quantum dots in such tight space is called Aerosol Jet technology which uses atomizer and gas flow control to obtain uniform and controlled narrow spots.