Poly(3-hexylthiophene)-Based Organic Thin-Film Transistors with Virgin Graphene Oxide as an Interfacial Layer.

We fabricated and characterized poly(3-hexylthiophene-2, 5-diyl) (P3HT)-based Organic thin-film transistors (OTFTs) containing an interfacial layer made from virgin Graphene Oxide (GO). Previously chemically modified GO and reduced GO (RGO) were used to modify OTFT interfaces. However, to our knowledge, there are no published reports where virgin GO was employed for this purpose.

Highly Conductive and Transparent Reduced Graphene Oxide Nanoscale Films via Thermal Conversion of Polymer-Encapsulated Graphene Oxide Sheets.

Despite noteworthy progress in the fabrication of large-area graphene sheetlike nanomaterials, the vapor-based processing still requires sophisticated equipment and a multistage handling of the material. An alternative approach to manufacturing functional graphene-based films includes the employment of graphene oxide (GO) micrometer-scale sheets as precursors. However, search for a scalable manufacturing technique for the production of high-quality GO nanoscale films with high uniformity and high electrical conductivity is still continuing.