Ultralow crosstalk nanosecond-scale nested 2 × 2 Mach-Zehnder silicon photonic switch.

We present the design and characterization of a novel electro-optic silicon photonic 2×2 nested Mach-Zehnder switch monolithically integrated with a CMOS driver and interface logic. The photonic device uses a variable optical attenuator in order to balance the power inside the Mach-Zehnder interferometer leading to ultralow crosstalk performance. We measured a crosstalk as low as -34.

Si⁺-implanted Si-wire waveguide photodetectors for the mid-infrared.

CMOS-compatible Si⁺-implanted Si-waveguide p-i-n photodetectors operating at room temperature and at mid-infrared wavelengths from 2.2 to 2.3 µm are demonstrated.

Binary phase-shift keying by coupling modulation of microrings.

We propose a coupling-modulated microring in an add-drop configuration for binary phase-shift keying (BPSK), where data is encoded as 0 and π radian phase-shifts on the optical carrier. The device uses the π radian phase-flip across the zero coupling point in a 2 × 2 Mach-Zehnder interferometer coupler to produce the modulation. The coupling-modulated microring combines the drive power reduction of resonant modulators with the digital phase response of Mach-Zehnder BPSK modulators.

Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing.

We present 1-to-8 wavelength (de-)multiplexer devices based on a binary tree of cascaded Mach-Zehnder-like lattice filters, and manufactured using a 90 nm CMOS-integrated silicon photonics technology. We demonstrate that these devices combine a flat pass-band over more than 50% of the channel spacing with low insertion loss of less than 1.6 dB, and have a small device size of approximately 500 × 400 µm.

A silicon-based widely tunable short-wave infrared optical parametric oscillator.

We demonstrate a synchronously pumped optical parametric oscillator (OPO) based on parametric gain in a silicon-on-insulator photonic wire. We exploit the highly nonlinear broadband response of the photonic wire to achieve broadband single-pass amplification up to 54 dB. This allows us to construct an OPO that is tunable across a 75 nm-wide band near 2075 nm, when pumped by a picosecond pulse train at 2175 nm.

Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer.

We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a V(π)∙L figure of merit of 0.12V∙mm, and an extinction ratio of -23dB.

High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.

50 dB parametric on-chip gain in silicon photonic wires.

A pulsed mid-infrared pump at λ=2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2 cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order (β2) and positive fourth-order (β4) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm-2486 nm. Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification >40 dB with an on-chip gain bandwidth wider than 580 nm, as well as narrowband Raman-assisted peak gain >50 dB.

Mid-infrared to telecom-band supercontinuum generation in highly nonlinear silicon-on-insulator wire waveguides.

We demonstrate the generation of a supercontinuum in a 2 cm long silicon wire by pumping the wire with mid-infrared picosecond pulses in the anomalous dispersion regime. The supercontinuum extends from 1535 nm up to 2525 nm for a coupled peak power of 12.7 W.

Low-power continuous-wave four-wave mixing in silicon coupled-resonator optical waveguides.

We demonstrate four-wave mixing in silicon-on-insulator coupled-resonator optical waveguides consisting of 35 and 65 microring resonators, using a cw pump with coupled power below 20 mW and observed parametric conversion across more than 10 THz. The conversion efficiency is enhanced by +16 dB relative to a silicon straight waveguide of equivalent length, due to the slowing factor of the coupled-resonator structure.

Drive-noise-tolerant broadband silicon electro-optic switch.

We report a broadband digital electro-optical switch, based upon a multi-stage Mach-Zehnder lattice design in silicon-on-insulator. A digital switching response is demonstrated, engineered through apodization of the coupling coefficients between stages. The digital switching behavior results in crosstalk lower than -15 dB for drive-voltage noise levels in excess of 300 mV(pp), which exceeds the noise tolerance of a conventional single-stage Mach-Zehnder switch by more than six-fold.

Self-phase modulation and nonlinear loss in silicon nanophotonic wires near the mid-infrared two-photon absorption edge.

We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm.

Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks.

We present a 4x4 spatially non-blocking Mach-Zehnder based silicon optical switch fabricated using processes fully compatible with standard CMOS. We successfully demonstrate operation in all 9 unique switch states and 12 possible I/O routing configurations, with worst-case cross-talk levels lower than -9 dB, and common spectral bandwidth of 7 nm. High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels.

Statistics of light transport in 235-ring silicon coupled-resonator optical waveguides.

In contrast to recent reports of localization-impaired transport in long slow-light waveguides, we demonstrate light transport in silicon coupled-resonator optical waveguides (CROWs) consisting of up to 235 coupled microrings without localization over frequency bands that are several hundred gigahertz wide. Furthermore, from the unique statistical signatures provided by time-domain propagation delay measurements, we demonstrate the spectrally correlated nature of light propagation in CROWs.

Waveguide dispersion effects in silicon-on-insulator coupled-resonator optical waveguides.

The dispersion of the waveguides that constitute microring resonators can considerably affect the dispersion characteristics of coupled-resonator optical waveguides (CROWs). We derive expressions for CROW dispersion and group delay for silicon-on-insulator microring CROWs, showing both theoretically and experimentally the band-to-band dependence of the bandwidth and group delay on the dispersion properties of the constituent single-mode silicon waveguide.

Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices.

We report the performance of NiSi-based heaters integrated with submicrometer silicon waveguides. The heaters were fabricated using a standard complementary metal-oxide-semiconductor (CMOS) silicidation process on a thin silicon slab laterally connected with a silicon rib waveguide. The intrinsic properties of such NiSi waveguide heaters were characterized by using them as thermo-optic phase shifters in a Mach-Zehnder interferometer.

Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.

We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off' switching states over an optical bandwidth of 110 nm, owing to the implementation of broadband 50% couplers. Full 2 x 2 switching functionality is demonstrated, with low power consumption (approximately 3 mW) and a fast switching time (< 4 ns).

Design of a digital, ultra-broadband electro-optic switch for reconfigurable optical networks-on-chip.

We present a novel design for a noise-tolerant, ultra-broadband electro-optic switch, based on a Mach-Zehnder lattice (MZL) interferometer. We analyze the switch performance through rigorous optical simulations, for devices implemented in silicon-on-insulator with carrier-injection-based phase shifters. We show that such a MZL switch can be designed to have a step-like switching response, resulting in improved tolerance to drive-voltage noise and temperature variations as compared to a single-stage Mach-Zehnder switch.

Conversion of 10 Gb/s NRZ-OOK to RZ-OOK utilizing XPM in a Si nanowire.

We have demonstrated for the first time to our knowledge, the conversion of 10 Gb/s non-return-to-zero (NRZ) on-off keying (NRZ-OOK) to RZ-OOK using cross-phase modulation (XPM) in a compact, Silicon (Si) nanowire and a detuned filter. The pulse format conversion resulted in a polarity-preserved, correctly-coded RZ-OOK signal, with no evidence of an error-floor for BER < 10(-11). The advantages of a passive Si nanowire can lead to a compact, power-efficient, highly simplified configuration, amenable to chip-level integration.

Optical high-performance computing: introduction to the JOSA A and Applied Optics feature.

The feature issues in both Applied Optics and the Journal of the Optical Society of America A focus on topics of immediate relevance to the community working in the area of optical high-performance computing.

Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches.

We report on a Si(3)N(4)-based surface-passivation technique for increasing free-carrier lifetimes in submicrometer silicon-on-insulator waveguides by up to 2 orders of magnitude. The carrier lifetime was measured by injecting free carriers into a critically coupled ring resonator through photoexcitation by short pump pulses and subsequently tracking the spectral detuning of the resonator during the carrier-recombination phase. Carrier lifetimes of up to 70 ns were obtained in waveguides passivated with a 45-nm-thick Si(3)N(4) coating.

Conformal dielectric overlayers for engineering dispersion and effective nonlinearity of silicon nanophotonic wires.

We introduce and study numerically a method for dispersion engineering of Si nanophotonic wires using a thin conformal silicon nitride film deposited around the Si core. Simulations show that this approach may be used to achieve the dispersion characteristics required for broadband, phase-matched, four-wave mixing processes, while simultaneously maintaining strong modal confinement within the Si core for high effective nonlinearity.

Optical modulation using anti-crossing between paired amplitude and phase resonators.

An optical modulator design based upon anti-crossing between coupled silicon microrings with independent amplitude and phase functionality is presented. The device exhibits over 25x improvement in sensitivity to an input drive signal when compared with previously studied microring modulators based on control of waveguide-resonator coupling. The new design also demonstrates an ON-OFF contrast of 14 dB, and has an ultra-compact footprint of 0.